Method for manufacturing Schottky diode
A technology of Schottky diodes and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as barrier height reduction, difficulty in process integration, leakage, etc., to improve Schottky barriers, Increased complexity, effect of increased breakdown voltage
Inactive Publication Date: 2011-04-20
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
The commonly used metals are cobalt (Co) and titanium (Ti). Due to the limitation of work function, they cannot form a higher potential barrier with silicon.
Although platinum (Pt) can form a high potential barrier with silicon, there are certain difficulties in process integration
In addition, in process steps s
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[0021] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0022] In the following description, specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways than those described here, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Accordingly, the invention is not limited to the specific implementations disclosed below.
[0023] The method provided by the invention is not only applicable to the manufacture of Schottky diode devices, but also applicable to other semiconductor devices or integrated circuits that have a metal-semiconductor interface and utilize the Schottky barrier effect.
[0024] Traditional Sch...
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The invention discloses a method for manufacturing a Schottky diode, which comprises the following steps of: providing a semiconductor substrate which is divided into an ohmic contact area and a rectifying contact area, and forming a doped well in the semiconductor substrate; forming a dielectric layer in the rectifying contact area of the semiconductor substrate; and forming a high-concentration diffusion area in the ohmic contact area of the semiconductor substrate, wherein the conductive type of the high-concentration diffusion area is as same as that of the doped well. By adding the dielectric layer in a metal-semiconductor interface, the method prevents a plasma process from damaging the metal-semiconductor interface, improves the state of the interface, improves a Schottky barrier, is favorable for reducing reverse bias leakage current to increase the breakdown voltage, and improves the electrical performance of a formed Schottky diode device.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a Schottky diode. Background technique [0002] Similar to the PN junction, the flow of carriers will occur when the metal and the semiconductor are in contact. This is because the work functions of the metal and semiconductor materials are different, so that the electrons flow from the place where the work function is small to the place where the work function is large. The semiconductor is close to the metal The contact interface with the semiconductor forms a space charge region. In the space charge region, the energy band will bend to form a potential barrier. When the potential barrier reaches a certain height, the flow of carriers will reach equilibrium, and the Fermi energy levels of metals and semiconductors should also be level off. This barrier is called the surface barrier (also known as Schottky barrier: Schottky barrier) between met...
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Login to View More IPC IPC(8): H01L21/329H01L21/314H01L21/8222
Inventor 冯喆韻高大为朱虹
Owner SEMICON MFG INT (SHANGHAI) CORP