118results about How to "Improve the state of the interface" patented technology

The invention discloses a lithium-sulfur battery adopting a multi-layer composite separator. The multi-layer composite separator is characterized in that one side surface of a substrate separator is coated with a polymer layer A, the other side surface of the substrate separator is coated with an inorganic solid material layer and a polymer layer B, and the inorganic solid material layer is located between the substrate separator and the polymer layer B. The mechanical strength of the separator can be improved by the inorganic solid material layer, when a ceramic material with a lithium ion conduction function is used, the ionic conductivity of the separator can be improved effectively, and a polarization effect in charge-discharge processes is reduced. An electrolyte of the lithium-sulfurbattery contains an additive, therefore, interface state of a cathode, an anode and the separator is improved, charge-discharge current on the lithium anode surface is more uniform, activity of the lithium anode in the lithium anode can be reduced effectively, possibility of formation of lithium dendrites is reduced greatly, and use stability of the lithium anode is improved.

The invention belongs to the technical field of composite materials and discloses a high-entropy alloy reinforced aluminum-based composite material and a preparation method thereof. The composite material takes high-entropy alloy as a reinforcing phase and takes aluminum alloy as a base body. The preparation method of the composite material comprises the following steps: packaging high-entropy alloy particles and aluminum alloy powder into a ball milling tank, sealing and mixing the powder for 5-25 hours to obtain a mixed material; packaging the mixed material into a bag; applying a pressure of 5MPa to 15MPa at room temperature to compact the mixed material in the bag to obtain a semi-finished product; putting the compacted semi-finished product into thermal extruding equipment, preheating the semi-finished product to 400-480 DEG C, preheating a mold to 200-400 DEG C, keeping the temperature of the semi-finished product and the mold for 1-3 hours to finish the preheating process, and then performing hot extrusion formation at an extrusion pressure of 5MPa to 15MPa and at an extrusion ratio of 4 to 25 to obtain the high-entropy alloy reinforced aluminum-based composite material.

A capacitor fabricating method for a semiconductor device where a dielectric film is thermally treated under hydrogen atmosphere to improve interface characteristics between the dielectric film and an electrode. In the method, a lower electrode is formed on a semiconductor substrate. A dielectric film is formed on the lower electrode. The dielectric film is thermally treated under hydrogen atmosphere. An upper electrode is formed on the dielectric film, thereby completing formation of the capacitor. The thermal treatment under the hydrogen atmosphere is performed at a temperature of 300 to 600 DEG C. using H2 gas or H2 plasma for 5 to 60 minutes. Thus, the density of an interface trap between the electrode and the dielectric film of the capacitor is reduced.

The invention discloses an amorphous alloy reinforced aluminum matrix composite and a preparation method thereof. The composite takes an aluminum matrix amorphous alloy as a reinforcement and takes an aluminum alloy as a matrix, and the aluminum matrix amorphous alloy is uniformly dispersed in the aluminum alloy. The preparation method is simple to operate, the temperature of a preparation process is low, and the composite can be prepared through a simple hot-pressed sintering process. The interface bonding strength of the aluminum matrix amorphous alloy and the aluminum alloy matrix is high, the interface state is good, and aluminum matrix amorphous alloy particles are uniformly distributed in the matrix and not easy to aggregate, so that the prepared composite is high in density and good in mechanical property, that is, the strength and the hardness are high.

The invention belongs to the technical field of high-polymer composite materials, and relates to a thermoplastic polyester/polyethylene composition and application thereof. The thermoplastic polyester/polyethylene composition is prepared from the following components in parts by weight: 20-80 parts of thermoplastic polyester, 20-80 parts of polyethylene, 2-20 parts of solubilizer and 0.1-2 parts of antioxidant, wherein the sum of the thermoplastic polyester and polyethylene is 100 parts. The obtained thermoplastic polyester/polyethylene composition is a uniform-phase composite material, and has favorable properties of the thermoplastic polyester and polyethylene. The polyester/polyethylene alloy material prepared from the thermoplastic polyester/polyethylene composition has the inherent advantages of the PBT (polybutylene terephthalate) and PE (polyethylene), thereby greatly improving the properties of the alloy material and greatly enhancing the dimensional stability and tensile property of the alloy film material; and thus, the alloy material has the advantages of high-temperature resistance, ultraviolet resistance, weather resistance, hydrolysis resistance, low production cost and the like.

Top and bottom surfaces of a gate insulating film are terminated with fluorine atoms and the top surface of the gate insulating film is then etched. New dangling bonds are formed on the top surface of the gate insulating film. Such new dangling bonds are terminated with nitrogen atoms. A semiconductor device is thus obtained that has a silicon substrate and a gate insulating film formed on the silicon substrate and that almost all dangling bonds on the top surface of the gate insulating film are terminated with nitrogen atoms and almost all dangling bonds on the bottom surface contacting the silicon substrate are terminated with fluorine atoms.

The invention relates to an epoxy resin composition for vacuum introduction formation of a fibre reinforced composite material and a preparation method of the epoxy resin composition. The epoxy resin composition comprises a component A and a component B, wherein the component A comprises the following ingredients in parts by mass: 100 parts of epoxy resin, 5-20 parts of diluent, 0.5-5.0 parts of silane coupling agent, 0.5-5.0 parts of inorganic filler; and the component B comprises the following ingredients in parts by mass: 25-45 parts of amine curing agent and 0.5-5.0 parts of accelerant. According to the invention, blend type epoxy resins of hydantoin epoxy resins and low-viscosity epoxy resins (4,5-epoxy cyclohexane-1,2-dioctyl phthalate diglycidyl ester, bisphenol F type glycidyl ether epoxy resin or bisphenol A type glycidyl ether epoxy resin) are adopted as a resin matrix, so that the requirement of vacuum introduction formation of the fibre reinforced composite material for the resin low viscosity can be met, and a composite material product has excellent high temperature resistance property.

A method of manufacturing an organic EL display unit and an organic EL display unit capable of improving light emitting efficiency and life of blue are provided. A hole injection layer are formed on a lower electrode. For a red organic EL device and a green organic EL device, a hole transport layer, a red light emitting layer, and a green light emitting layer made of a polymer material are formed. A hole transport layer made of a low molecular material is formed on the hole injection layer of a blue organic EL device. A blue light emitting layer made of a low molecular material is formed on the red light emitting layer, the green light emitting layer, and the hole transport layer for the blue organic EL device. An electron transport layer, an electron injection layer, and an upper electrode are sequentially formed on the blue light emitting layer.

An enhancement-mode GaN-based HEMT device on Si substrate and a manufacturing method thereof. The device includes a Si substrate, an AlN nucleation layer, AlGaN transition layers, an AlGaN buffer layer, a low temperature AlN insertion layer, an AlGaN main buffer layer, an AlGaN/GaN superlattice layer, an GaN channel layer), and an AlGaN barrier layer. Both sides of a top end of the HEMT device are a source electrode and a drain electrode respectively, and a middle of the top end is a gate electrode. A middle of the AlGaN barrier layer is etched through to form a recess, and a bottom of the recess is connected to the GaN channel layer. A passivation protective layer and a gate dielectric layer are deposited on the bottom of the recess, and the gate electrode is located above the dielectric layer.

The invention discloses a preparation method of a H-grade water-solubility silicon steel sheet paint, which comprises the following steps of: taking raw materials such as 10-20 parts of plant oil, 5-10 parts of polyatomic alcohol, 5 parts of binary acid, 3 parts of trimellitic anhydride, 5 parts of cosolvent, 3 parts of neutralizer, 0.5 part of coupling agent, 30 parts of alcohol, 25 parts of nanometer inorganic packing, 0.15 part of pigment, 5 parts of melamine resin, 0.1 part of flatting agent, 2 parts of dispersing moistening agent, 0.1 part of deforming agent and 10 parts of water according to a weight ratio, and preparing an environmental-friendly product with good combination properties for large generators through the synthesis of alkyd resins, the coupling treatment of the nanometer inorganic packing, the mixing and dispersion of materials such as the inorganic substances and the like in a paint, the grinding of the paint vehicle and the like. The preparation method has the advantages of solving the problems of sedimentation, aggregation and blocking of powder in paint liquid under the condition of high content of inorganic powder, obviously increasing the storage stability of the paint liquid and the hardness of a paint film, effectively reducing the discharge of poisonous and harmful gases in the production process and reducing the harm to the health of human bodies.

The invention belongs to the research field of metal matrix composites and relates to a high thermal conductivity graphite whisker/copper composite and a preparation method thereof. The composite comprises two parts, namely matrix pure copper and plated reinforced phase high thermal conductivity graphite whisker, wherein the volume fraction of the pure copper is 40 to 70 percent, and the volume fraction of the plated graphite whisker is 30 to 60 percent. The composite adopts the following production process steps: firstly, the surface of graphite whisker is plated with copper or molybdenum byadopting a chemical plating or salt bath plating method, so as to form a plating with the thickness of 1 to 2 Mum; and secondly, the plated graphite whisker and copper powder are uniformly mixed in the proportion of (30 to 60) to (70 to 40), and then the mixture is sintered at 820 to 980 DEG C by adopting an SPS Spark Plasma Sintering powder metallurgic method, so as to prepare the graphite whisker/copper composite. The invention provides the preparation method of the graphite whisker/copper composite used in the electronic packaging field, and the graphite whisker/copper composite has the advantages of high thermal conductivity, controllable thermal expansion coefficient, high density, easiness in processing and the like, thereby meeting requirements in the modern electronic packaging field.

The invention provides a preparation method for a compound material of Valox/ethylene-vinyl acetate. In a double screw extruder, the mixture of EVA, PBT, a reactive compatilizer and a chemical inhibitor which are uniformly mixed in advance is added; then the mixture is extruded and granulated under a certain temperature and a certain rotation speed to prepare the compound material of Valox/ethylene-vinyl acetate with excellent performances. The reactive compatilizer is adopted by the invention; a reaction in-situ is utilized to improve the interface state between the PBT and the EVA to improve the compatibility between the PBT and the EVA; compared with the material of Valox, the toughness of the prepared compound material is greatly improved; compared with the material of ethylene-vinyl acetate, the intensity of the prepared compound material is correspondingly improved as well; the application range thereof is enlarged; the prepared compound material has a boarder industrialization prospect.

The invention discloses a method for preparing a bisphenol compound antioxidant product by using an organic acid catalyst. A closed reactor is adopted, water is used as reaction solvent, a liquid organic acid catalyst is selected as a catalyst, and the bisphenol compound antioxidant product is generated through the condensation reaction of dialkyl phenol and aliphatic aldehyde. The liquid organicacid catalyst is one or a mixture of more of long-chain alkyl benzene sulfonic acid, long-chain dialkyl benzene sulfonic acid, long-chain alkyl diphenyl ether disulfonic acid and long-chain dialkyl diphenyl ether disulfonic acid and aliphatic hydrocarbon of C6 to C10 or aromatic hydrocarbon of C6 to C8 in a mass ratio of 1: 0.1-1.0. The dosage of the liquid organic acid catalyst is 7 to 30 percent by mass of dialkyl phenol; the mass ratio of the water to the dialkyl phenol is 2-5:1; and the molar ratio of the aliphatic aldehyde to the dialkyl phenol is 0.45-0.60: 1. The reaction pressure is 0to 0.1MPa, the reaction temperature is 60 to 95 DEG C, and the reaction time is 4 to 7 hours. The raw material variety used by the method is reduced, and the production efficiency is improved; and the method avoids using sulfuric acid and hydrochloric acid with stronger corrosion on the equipment.

A highly reliable semiconductor device having stable electrical characteristics is provided. Oxide films each containing one or more kinds of metal elements included in an oxide semiconductor film are formed in contact with an upper side and a lower side of the oxide semiconductor film where a channel is formed, whereby interface states are not easily generated at an upper interface and a lower interface of the oxide semiconductor film. A material which has a lower electron affinity than the oxide semiconductor film is used for the oxide films in contact with the oxide semiconductor film, whereby electrons flowing in the channel hardly move in the oxide films and mainly move in the oxide semiconductor film. Thus, even when an interface state exists between the oxide film and an insulating film formed on the outside of the oxide film, the state hardly influences the movement of electrons.

The invention discloses a preparation method of a high-hardness conductive carbon-based thin film. The preparation method of the high-hardness conductive carbon-based thin film comprises the steps ofplacing an ultrasonically cleaned conductive metal workpiece in a vacuum chamber of a vacuum coating device, and carrying out ion etching and activating; then adopting a bipolar pulse direct-current power supply, sequentially passing through a Cr metal target and a WC target, and forming a Cr-WC transition layer; preparing a hydrogen-containing amorphous diamond-like coating on the Cr-WC transition layer; and rising the temperature to 430 to 600 DEG C in a heat treatment device, preserving heat, and obtaining the high-hardness conductive carbon-based thin film. According to the preparation method of the high-hardness conductive carbon-based thin film provided by the invention, in the diamond-like coating (DLC), the content of sp3C-C is high, high hardness is obtained, meanwhile, the conductivity is reduced, and the diamond-like coating/carbon-based thin film with high adhesion, high hardness and conductivity equivalent to graphite is obtained.

The invention belongs to the technical field of sealing coating materials and particularly relates to a four-phase ceramic matrix high-temperature wearable sealing coating. The coating is composed of four phases including a ceramic matrix phase, a lubricating phase, a pore-forming phase and a high-temperature antioxidant nanophase. A certain proportion of high-temperature antioxidant nanophase is added on the basis of the traditional two-phase or three-phase ceramic matrix high-temperature wearable sealing coating to coat the ceramic matrix phase, so that the four-phase ceramic matrix high-temperature wearable sealing coating with multi-sealing antioxidant barriers is formed. The ceramic matrix phase is ZrO2 with part of stable Dy2O3, the lubricating phase is h-BN, the pore-forming phase is polyester, and the high-temperature antioxidant nanophase is nano SiO2 or Al2O3 or Cr2O3. The four-phase ceramic matrix high-temperature wearable sealing coating has the advantages that the diffusion of oxygen towards the inside of the coating or a coating/matrix interface can be effectively stopped due to the addition of the high-temperature antioxidant nanophase, so that the high temperature stability and interface integrity of the coating are effectively enhanced, and the thermal shock resistance of the wearable sealing coating at high temperature is remarkably improved.

The invention belongs to the technical field of preparation of electrostatic spinning nanofiber field effect transistors, and relates to a method for preparing an indium oxide/aluminium oxide nanofiber field effect transistor through UV light pretreatment. The process steps mainly include preparation of a Al2O3 high-k dielectric film, preparation of nanofibers, UV light treatment, high-temperature calcination, photoetching sizing and deposition of source and drain electrodes by use of ion beams; a nanofiber device based on the Al2O3 high-k dielectric layer is remarkably reduced in operating voltage and remarkably reduced in energy consumption, which is in favor of integration in a mobile device; the energy gap width of a prepared Al2O3 high-k gate dielectric layer is 8.7eV, a dielectric constant reaches 6.7, and the high dielectric property completely meets the requirement of a modern display technology for a high-k material; high transmittance of a Al2O3 thin film itself completely meets the requirement of a transparent electronic device; and the preparation is low in cost, the process is simple, the principle is reliable, the product performance is good, the device stability is good, and the application prospects are broad.

A processing method for improving a threshold voltage of a thin film transistor (TFT) device is applied before a gate insulation layer formed on a poly-silicon channel film layer and comprises the following steps of performing hydrofluoric acid cleaning operation on the poly-silicon channel film layer with hydrofluoric acid; performing protection atmosphere thermal processing operation on the poly-silicon channel film layer subjected to hydrofluoric acid cleaning operation; performing first-time ionization operation on hydrogen in a vacuum chamber to form first plasma, and performing first-time plasma cleaning operation with the first plasma; and performing second-time ionization operation on nitrogen monoxide in the vacuum chamber to form second plasma, and performing second-time plasma cleaning operation with the second plasma. By the processing method for improving the threshold voltage of the TFT device, an interface state between the poly-silicon channel film layer and the gate insulation layer can be improved, the threshold voltage of the TFT device can be reduced, so that the threshold voltage of the TFT device can be improved.

The invention discloses a high-entropy alloy reinforced magnesium-based composite material and a preparation method thereof. A high-entropy alloy is used as a reinforced phase of the composite material; and a magnesium alloy is used as a matrix of the composite material. The preparation method comprises the following steps of: firstly preparing a high-entropy alloy ingot; then preparing high-entropy alloy powder; preparing composite powder by using the high-entropy alloy powder and magnesium alloy powder; and finally performing sintering molding, hot extrusion molding and extrusion molding. The high-entropy alloy powder and the magnesium alloy matrix in the interface of the composite material have relatively good wettability, and are beneficial to the uniform diffusion of the high-entropyalloy in the magnesium alloy; a physical bonding type interface can be formed; the bonding strength of the interface is high; the interface state is good; and the problem that the generation of an effective interface between an existing magnesium alloy composite material and a reinforced body is difficult is solved.

The invention discloses a basin-type insulator and a manufacturing process thereof. The basin-type insulator comprises a basin body and a center conductor. The center conductor is machined and formed, the outer cylindrical surface is in a shape like a Greek letter 'omega', and the normal bearing area is increased. The manufacturing process mainly includes the two stages of center conductor pretreatment and epoxy resin pouring. The center conductor is subjected to die filling and preheating after machining, washing, sand blasting and epoxy resin adhesive coating, materials obtained after vacuum mixing are poured into a die, and the basin-type insulator is finally formed through two times of curing. By means of the process, due to the fact that shape machining, sand blasting and adhesive coating are additionally carried out on the center conductor, electric field distribution is more reasonable, interface bonding strength is remarkably improved, and the poured and formed basin-type insulator has excellent electrical and mechanical performance.

The invention discloses a self-isolation type anti-fouling agent. The self-isolation type anti-fouling agent is characterized by being prepared from the following raw materials in parts by weight: 15-20 parts of hydrogen-containing silicone oil, 0.5-2.5 parts of amino silane, 800-100 parts of 120# solvent petroleum, 0-4 parts of 200# solvent petroleum, 0-4 parts of solvent petroleum D-40 and 3-5 parts of amino-silicone oil. Compared with the prior art, the self-isolation type anti-fouling agent has the advantages that the amino-silicone oil is added into the solvent type anti-fouling agent, when the solvent is volatilized, amino in the amino-silicone oil participates in body polymerization reaction and is firmly adhered with a ceramic tile, and three methyl in the amino-silicone oil is fluttered to and distributed to the surface of the whole ceramic tile along with volatilization of the solvent to form a self-insulation layer, so that the self-isolation type anti-fouling agent can be packaged and stored without drying for a long time, and therefore, production efficiency is high.

The invention relates to a carbon fiber composite material cable core, which comprises a load bearing core (12) and a protection layer (13), wherein the protection layer (13) is covered outside the load bearing core (12) through a winding process, the load bearing core (12) is a high-temperature-resistance mechanical property epoxy resin and carbon fiber compound, and the protection layer (13) is a compound of high-temperature-resistance and weather-resistance epoxy resin compositions and glass fibers. The carbon fiber composite material cable core adopts the blending epoxy resin of the hydantoin epoxy resin and low-viscosity epoxy resin as resin substrates, the requirement of glass fibers on the low viscosity of the resin can be met, and the cable core can also have excellent high-temperature-resistance performance.