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High-speed optical shutter, operating method thereof, and optical device

A technology for optical shutters and display devices, applied in optics, optical elements, nonlinear optics, etc., can solve problems such as complex structures and difficult commercialization of semiconductor-based optical shutters

Inactive Publication Date: 2016-01-20
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, image intensifiers are expensive devices that require high voltage and vacuum packaging
In addition, although semiconductor-based optical shutters can overcome the operational and structural shortcomings of image intensifiers, compared with photodiodes and light-emitting diode (LED) devices used in the related art, semiconductor-based optical shutters are fabricated on GaAs through a semiconductor fabrication process. In the substrate and with complex structures, semiconductor-based optical shutters are difficult to commercialize due to price and manufacturing difficulties

Method used

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  • High-speed optical shutter, operating method thereof, and optical device
  • High-speed optical shutter, operating method thereof, and optical device
  • High-speed optical shutter, operating method thereof, and optical device

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Embodiment Construction

[0072] Reference will now be made in detail to exemplary embodiments of an optical shutter using a total internal reflection angle controlling medium, a method of operating the same, and an apparatus including the same, examples of which are illustrated in the accompanying drawings. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

[0073] figure 1 is a cross-sectional view illustrating a configuration of an optical shutter according to an exemplary embodiment.

[0074] refer to figure 1 , the optical shutter according to the present exemplary embodiment may include an active solid medium 30 for controlling a total internal reflection angle. The active solid-state medium 30 for controlling the total internal reflection angle (hereinafter referred to as the total internal reflection angle control medium 30) may have a total internal reflection surface where the total internal reflection angle is changed by an external action (i.e., an input)...

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Abstract

The invention provides a high-speed optical shutter and its operating method and optical device. The optical shutter includes an active solid-state transparent electro-optical medium having a total internal reflection surface on which the total internal reflection angle is modified by external effects. Transparent electro-optical media may be prisms or prism arrays whose total internal reflection angle is modified by external effects. The incident light path changing unit may also be arranged in front of the transparent electro-optical medium. In addition, the light path changing unit can also be arranged so that the light passing through the electro-optical medium is vertically incident on the incident target object.

Description

technical field [0001] Exemplary embodiments encompassed by the present disclosure relate to optical devices, and more particularly, to a high-speed optical shutter, a method of operating the high-speed optical shutter, and an optical device including the high-speed optical shutter. Background technique [0002] An optical shutter for transmitting or blocking an optical image according to a control signal is an important optical module widely used in imaging devices including cameras and display devices including liquid crystal displays (LCDs). [0003] Recently, research into a three-dimensional (3D) camera or a laser radar (LADAR) technology for obtaining distance information of an object is being conducted. In this regard, the 3D camera and LADAR technologies measure a distance between a camera and a target by utilizing time-of-flight (TOF) of light. [0004] The shuttered light pulse (SLP) method among various TOF methods includes: emitting light of a specific wavelengt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/00G02B26/08
Inventor 朴勇和亚历山大·戈雷洛夫斯塔尼斯拉夫·施蒂科夫亚历山大·希兰科夫
Owner SAMSUNG ELECTRONICS CO LTD