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Mask graph correcting method and mask manufacturing method

A pattern correction and mask technology, applied in the field of photolithography, can solve the problems of time and manpower, and achieve the effects of saving manpower and material resources, simplifying correction, and saving production costs

Active Publication Date: 2012-05-23
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In some cases, after completing the subsequent optical proximity correction process for all patterns in the mask pattern, it is even necessary to reset the target of some patterns and perform optical proximity correction again based on this, in order to obtain better exposure results. Mask pattern, the time and manpower spent during it is huge

Method used

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  • Mask graph correcting method and mask manufacturing method
  • Mask graph correcting method and mask manufacturing method
  • Mask graph correcting method and mask manufacturing method

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Embodiment Construction

[0030] The invention provides a method for correcting mask patterns. In the process of correcting mask patterns, the relationship between design patterns and mask patterns and the mutual influence between patterns are fully considered. The target reset process is effectively combined with the optical proximity correction process for subsequent corrections, so that in each correction process for each pattern, not only the requirements of the pattern size, size and other parameters on the process window are taken into account, but also Taking into account the interaction between the pattern and adjacent patterns, the existing correction process of resetting the target on the mask pattern and then performing optical proximity correction and repeating it many times is simplified, saving a lot of manpower and time.

[0031] The implementation of the mask pattern correction method of the present invention will be described in detail below with reference to the accompanying drawings a...

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Abstract

The invention discloses a mask graph correcting method and a mask manufacturing method. The mask graph correcting method comprises the following steps of: performing optical proximity correction on a graph to be corrected to acquire a corrected graph; acquiring a corresponding process window according to the corrected graph; comparing the process window with a set value; and when the process window is smaller than the set value, repeating the correction on the initial corrected graph till the correction is finished when the process window is greater than or equal to the set value. The method avoids the optical proximity correction on each graph after all the graphs are subjected target reset, simplifies the mask graph correction, saves manpower and time, greatly reduces the correction time and improves the production efficiency.

Description

technical field [0001] The invention relates to photolithography technology, in particular to a mask pattern correction method and a mask plate manufacturing method. Background technique [0002] In the photolithography process, based on the optical effect of the original design pattern, designing a mask pattern according to the original design pattern and correcting the mask pattern is a crucial step in lithography. [0003] Existing mask pattern correction methods generally include: in the early stage of correction, target reset for all patterns in the design pattern, and in subsequent correction, optical proximity correction for all patterns in the mask pattern. Specifically, in the early stage of correction, the target reset of all patterns in the design graphics may include: first, determine the design rules of the design graphics based on empirical values; then, according to the design rules, query the adjustment amount of the process window corresponding to the design...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/36
Inventor 李承赫杨青
Owner SEMICON MFG INT (SHANGHAI) CORP