Method for dynamically adjusting polishing parameters in chemical mechanical polishing process

Abstract

The invention discloses a method for dynamically adjusting polishing parameters in a chemical mechanical polishing process. The method comprises the following steps of: selecting n easily-worn components from chemical mechanical polishing equipment, wherein n is a positive integer which is greater than 1; dividing the service life of a kth easily-worn component into m(k) use time phases tk and m(k) respectively for each of the n easily-worn components, wherein k and mk are positive integers which are greater than 0, and k is more than or equal to 1 and less than or equal to n; defining X groups of polishing parameters, wherein each group of polishing parameters corresponds to the states of n pieces of easily-worn equipment at any use time phase tk and m(k), wherein X is equal to m(1)*m(2)*...xm(n); and in the process of operating the chemical mechanical polishing equipment, selecting a corresponding group of polishing parameters according to respective use time phase at which each easily-worn component is positioned to adjust the chemical mechanical polishing equipment.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to the dynamic adjustment of parameters in a chemical mechanical polishing (CMP) process. Background technique [0002] With the development of integrated circuit manufacturing technology, the requirements for the integration density of semiconductor devices are increasing. With the introduction of multi-layer metallization technology into the integrated circuit manufacturing process in the 1970s, the vertical space of the semiconductor wafer was effectively utilized, and the integration level of the device was significantly improved. However, a new problem caused by multilayer metallization is that the unevenness of the surface of the silicon wafer is aggravated. The unevenness of the surface of the silicon wafer will cause problems such as uneven thickness of the photoresist in the subsequent photolithography steps, which in turn leads to photolithography. The limitation h...

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Problems solved by technology

[0010] In order to dynamically adjust the CMP process parameters effectively, solve the problem of different grinding degrees between the center part and the edge part of the wafer, and improve the yield rate of the device, the present invention proposes a method for dynamically adjusting the polishing parameters in the chemical mechanical polishing process. The method comprises the following steps: selecting n wearable parts in chemical mechanical polishing equipment, wherein n is a positive integer greater than 1; for each wearable part in the n wearable parts, the k-th The service life of wearable parts is divided into m(k) use time stages t k，m(k) , where k and m k is a positive integer greater than 0, 1≤k≤n; define X sets of polishing parameters, where each set of polishing parameters corresponds to all n wearable equipment in any use time stage t k，m(k) state at that time, where X=m(1)×m(2)×...×m(n); during the operation of the chemical mechanical polishing equipment, according to the The respective use time stages, select the corresponding set of polishing parameters to adjust the chemical mechanical polishing equipment

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