Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of nanofluid transistor

A transistor and fluid technology, applied in the field of preparation of nanofluidic transistors, can solve the problems of difficulty in reaching the nanometer level, low process reliability, incompatibility, etc., and achieve the effects of convenient preparation, cost reduction, and improved integration.

Inactive Publication Date: 2012-02-22
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the optical lithography method is limited by the wavelength of light, and the etching limit is at the micron level, which is difficult to reach the nanometer level; the methods of microcontact printing, electron beam etching and focused ion beam etching have long cycles and high costs; electrochemical and The process reliability of the electromigration method is low, which may lead to incompatibility with the CMOS process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of nanofluid transistor
  • Preparation method of nanofluid transistor
  • Preparation method of nanofluid transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] see Figure 1 to Figure 8 As shown, a method for preparing a nanofluid transistor of the present invention comprises the following steps:

[0034] Step 1: grow a corrosion-resistant electrothermal insulating material layer 102 and base material layer 103 on the substrate 101; the electrothermal insulating material 102 can be oxide, nitride, sulfide or be made of oxide, nitrogen any one of mixtures of at least two of compound and sulfide; the growth of a layer of electrothermal insulating material 102 on the substrate can be by sputtering, evaporation, plasma-assisted deposition, chemical One of vapor deposition method, metal-organic thermal decomposition method, laser-assisted deposition method and thermal oxidation method is realized; the electric thermal insulation material 102, for the wet removal of the base material layer 103 in step 5 and the wet removal method in step 8 The etchant used when removing the side wall material layer 104 by the method has corrosion r...

Embodiment

[0045] 1. Using semiconductor or insulating materials such as monocrystalline silicon wafers and SOI wafers as the substrate 101;

[0046] 2. Using a thin film preparation process, silicon nitride is prepared on the substrate as the electrothermal insulation layer 102 and polysilicon is used as the base material layer 103;

[0047] 3. Remove the four sides of the base material layer 103 by photolithography and dry etching to form a pattern as the base for preparing side walls;

[0048] 4. Deposit SiO on the surface and side surfaces of the electrothermal insulating material layer 102 and the base material layer 103 2 as side wall material layer 104;

[0049] 5. Use dry etching back to remove the upper surface of the base material layer 103 and the sidewall material layer 104 on the surface of the electrical insulation material layer 102, and form SiO with a height and a width of nanometer size. 2 side wall;

[0050] 6. Rinse off the side wall substrate 103 with a constant t...

Embodiment 2

[0056] see Figure 9 to Figure 16 As shown, a method for preparing a nanofluid transistor of the present invention comprises the following steps:

[0057] Step 1': growing a layer of corrosion-resistant electrical and thermal insulation material layer 102' and base material layer 103' on the substrate 101'; the electrical and thermal insulation material 102' can be oxide, nitride, sulfide or Any one of mixtures composed of at least two of oxides, nitrides, and sulfides; the growth of a layer of electrothermal insulating material 102' on the substrate can be done by sputtering, evaporation, or plasma It is realized by one of assisted deposition method, chemical vapor deposition method, metal organic compound thermal decomposition method, laser assisted deposition method and thermal oxidation method; the electrothermal insulating material 102' is used for removing the substrate by wet method in step 5' The material layer 103' and the etching solution used for wet removal of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
widthaaaaaaaaaa
heightaaaaaaaaaa
Login to View More

Abstract

A method for preparing a nanofluid transistor, comprising: growing a layer of electrothermal insulating material and a base material layer on a substrate; removing four sides of the base material layer by photolithography and dry etching to form a base for preparing side walls Deposit a side wall material layer on the surface and side surfaces of the electric thermal insulating material layer and the base material layer; remove the upper surface of the base material layer and the side wall material layer on the surface of the electric thermal insulating material layer, forming a height and a width that are all nanometers The size of the side wall; remove the base material layer; on one side of the side wall material layer, put a layer of anti-corrosion insulating material for making nano flow pipeline; then put an anti-corrosion insulating material layer for making gate electrode Corroded metal layer; remove the side wall material layer, retain the anti-corrosion insulating material layer and anti-corrosion metal layer, form a nano-flow pipe, and inject the nano-fluid; passivate and open holes at both ends of the pipe and above the metal layer, and lead out The three-terminal electrodes form a nanofluid transistor.

Description

technical field [0001] The invention relates to the technical field of micro-nano electronics, in particular to a preparation method of a nanofluid transistor. The invention provides a method for preparing a nanofluid transistor by adopting a sidewall process and a wet etching method. This method avoids the disadvantages of high cost and long period of electron beam exposure as far as possible, and has great advantages in breaking through the limitation of lithography resolution and improving the preparation efficiency of nanofluid transistors. Background technique [0002] In recent years, the semiconductor industry and the microelectronics industry have developed rapidly with Moore's Law, but with the introduction of quantum size effects, etc., the size of transistors has almost reached the limit. In order to find new ways to promote the further development of the microelectronics industry. Many scientists are committed to the development of new electronic components, su...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/335
Inventor 张加勇王晓峰王晓东杨富华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI