Unlock instant, AI-driven research and patent intelligence for your innovation.

Drive circuit of power transistor

A technology of power transistors and driving circuits, which is applied in the direction of electrical components, electronic switches, pulse technology, etc., and can solve problems such as electromagnetic wave interference and increase the area of ​​circuit design

Active Publication Date: 2012-09-26
吴江汾湖科技创业服务有限公司
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, switching the setting of the control circuit and the inductance will increase the area of ​​the circuit design, and the inductance will generate electromagnetic wave interference during the charging and discharging process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Drive circuit of power transistor
  • Drive circuit of power transistor
  • Drive circuit of power transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] see figure 2 , figure 2 is a schematic diagram of a driving circuit 30 according to an embodiment of the present invention. Such as figure 2 As shown, the driving circuit 30 is connected between the PWM signal generating unit 32 and the power transistor 34 . The driving circuit 30 includes a first switch 300 , a second switch 302 , a third switch 304 and a fourth switch 306 . In this embodiment, the first switch 300 and the third switch 304 can be P-type transistors, and the second switch 302 and the fourth switch 306 can be N-type transistors. In other words, the first switch 300 and the second switch 302 form an inverter, and the third switch 304 and the fourth switch 306 also form an inverter.

[0016] The gate G1 of the first switch 300 is connected to the first node N1 , the source S1 is connected to the second node N2 , and the drain D1 is connected to the first power supply terminal VDD. The gate G2 of the second switch 302 is connected to the first node ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a drive circuit of a power transistor, comprising a first switch, a second switch, a third switch and a fourth switch. The first switch is connected to a first node, a second node and a first power supply end providing a first voltage. The second switch is connected to the first node, the second node and a first earthing end. The third switch is connected to the second node, a third node and the first power supply end. The fourth switch is connected to the second node, the third node and a second earthing end. The power transistor is connected to the third node, and a pulse-width regulating signal is input from the first node. The pulse-width regulating signal is provided with a second voltage smaller than the first voltage.

Description

technical field [0001] The present invention relates to a driving circuit of a power transistor, in particular to a driving circuit capable of effectively reducing conduction loss and switching loss of the power transistor. Background technique [0002] see figure 1 , figure 1 It is a schematic diagram of a known boost circuit 1 . A known boost circuit 1 includes an inductor 10, a Schottky diode 12, a load 14, a pulse width modulation (Pulse Width Modulation, PWM) signal generating unit 16, and a power transistor (power MOSFET) 18, where the connection relationship of the above components is as follows figure 1 It is illustrated, and its principle of action can be easily achieved by those with known skills, and will not be repeated here. [0003] Such as figure 1 As shown, when the load 14 is a heavy load structure, the power transistor 18 needs to use a high power specification to achieve the high voltage required to drive the heavy load. However, since the selected p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/04H03K17/687
Inventor 陈英佩黄明伟
Owner 吴江汾湖科技创业服务有限公司