Simulation method for double-pole transistor

Abstract

The invention discloses a simulation method for a double-pole transistor. In the simulation method, a Gumme1-Poon model is adopted to simulate the double-pole transistor, the fitting of resistance model parameters on various direct current characteristics of the double-pole transistor is kept, and simultaneously the larger influence of the base resistance of the double-pole transistor on the high-frequency characteristics of the double-pole transistor is considered; and when determining three model parameters related to the base resistance in the Gumme1-Poon double-pole transistor model, the three model parameters related to the base resistance are extracted by utilizing the different high-frequency characteristics of the double-pole transistor under different working states, thereby ensuring the fitting precision of the base resistance model parameters of the double-pole transistor under the high-frequency condition so as to achieve the high-precision simulation on the whole characteristics of the double-pole transistor.

Description

technical field [0001] The invention belongs to semiconductor design technology and relates to a bipolar transistor simulation method. Background technique [0002] Bipolar transistors are one of the devices frequently used in modern semiconductor integrated circuits. Especially in the design of high-speed analog integrated circuits, the device has a wide range of applications. Therefore, the simulation accuracy of the device model of the bipolar transistor directly affects the design accuracy of the related integrated circuit, and the scientific model parameter extraction method is the key to ensure the accuracy of the device model. At present, the device model of bipolar transistors mostly adopts the Gummel-Poon model, which includes dozens of different model parameters, among which there are three device model parameters related to the base resistance, namely RB, RBM and IRB, where RB is bipolar The base resistance of the bipolar transistor collector works with a small ...

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Problems solved by technology

The accurate extraction of these three model parameters related to the base resistance has always been a recognized difficulty in the industry. Although the industry has proposed some extraction methods for the base resistance model parameters, they often only focus on the DC test data and models for bipolar The fitting of various DC characteristics of the transistor, while ignoring the influence of the base resistance model parameters of the bipolar transistor on its high-frequency characteristics, the extracted device model related to the base resistance only has a certain accuracy in the simulation of the DC characteristics. In radio frequency simulation, the simulation accuracy of model parameters is often poor, which leads to a decrease in the overall simulation accuracy of the bipolar transistor device model

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