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Polycrystalline diode applying germanium-silicon process and manufacturing method thereof

A manufacturing method and diode technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of not integrating CMOS, limiting the use of electrostatic protection structures, etc., and achieve the effect of increasing the area and reducing the chip area

Active Publication Date: 2013-01-09
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
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Problems solved by technology

However, many RF products using silicon germanium materials do not integrate CMOS, which greatly limits the use of electrostatic protection structures based on cost considerations.

Method used

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  • Polycrystalline diode applying germanium-silicon process and manufacturing method thereof
  • Polycrystalline diode applying germanium-silicon process and manufacturing method thereof
  • Polycrystalline diode applying germanium-silicon process and manufacturing method thereof

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Embodiment Construction

[0029] The present invention utilizes N-type polysilicon in the prior art (as a polysilicon resistor in the prior art), P-type polysilicon germanium (as the base of a heterojunction NPN diode in the prior art) and N-type polysilicon (as the base of a heterojunction NPN diode in the prior art). In some processes, as the emitter of heterojunction NPN diodes) stacks can form vertical polycrystalline diodes. Such as figure 1 Shown is a novel polycrystalline diode structure according to the present invention. The N pole and P pole of this diode are formed by vertically stacking the first layer of polysilicon 2 , the polysilicon germanium 3 and the second layer of polysilicon 10 .

[0030] In the silicon germanium process, there are multiple layers of polysilicon and silicon germanium, which are doped with N-type or P-type respectively. Based on this process, the present invention proposes a novel polycrystalline diode structure. This structure can be used for electrostatic prote...

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Abstract

The invention discloses a polycrystalline diode applying a germanium-silicon process and a manufacturing method thereof. The polycrystalline diode comprises a field oxidation area; a first polycrystalline silicon layer is arranged on the field oxidation area; a polycrystalline germanium-silicon layer is arranged on the first polycrystalline silicon layer; a second polycrystalline silicon layer isarranged on the polycrystalline germanium-silicon layer; and a metal layer is led out on the first polycrystalline silicon layer and the second polycrystalline silicon layer, and a metal layer is ledout on the polycrystalline germanium-silicon layer. In the invention, on the basis of the existing germanium-silicon process, a heterojunction longitudinal diode structure is developed and can be used for applications such as electrostatic protection and the like.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a diode and a manufacturing method thereof. Background technique [0002] The damage of static electricity to electronic products has always been a problem that is not easy to solve. Based on different processes and requirements, we search and optimize different structures to meet the requirements of electrostatic protection. The most commonly used electrostatic protection structure today uses a gate-grounded NMOS structure (GGNMOS, Ground Gate NMOS). However, many RF products using silicon germanium materials do not integrate CMOS, which greatly limits the use of electrostatic protection structures based on cost considerations. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a polycrystalline diode, which adopts the existing silicon germanium process and can be used as an electrostatic pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
Inventor 刘梅苏庆
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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