A novel trench structure power mosfet device and its manufacturing method
A trench and power technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of unimproved device switching speed and switching loss, reduced device reliability and consistency, limited maximum injection energy, etc. problems, to achieve the effect of increasing the difficulty and cost of process implementation, improving the characteristic on-resistance, and facilitating promotion and mass production
A trench and power technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of unimproved device switching speed and switching loss, reduced device reliability and consistency, limited maximum injection energy, etc. problems, to achieve the effect of increasing the difficulty and cost of process implementation, improving the characteristic on-resistance, and facilitating promotion and mass production
CN102280487AActive Publication Date: 2011-12-14WUXI NCE POWER
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[0065] The present invention will be further described below in conjunction with specific drawings and embodiments.
[0066] Such as Figure 1~Figure 16 As shown: taking an N-type power MOSFET device as an example, the present invention includes an N+ substrate 1, an N-type epitaxial layer 2, an N+ injection region 3, a second contact hole filling metal 4, a first contact hole filling metal 5, and a source metal 6. Insulating dielectric layer 7, first contact hole 8, source contact hole 9, P well layer 10, first insulating gate oxide layer 11, drain metal 12, cell trench 13, third insulating gate oxide layer 14 , second conductive polysilicon 15, second insulating gate oxide layer 16, first conductive polysilicon 17, first main surface 18, second main surface 19, hard mask layer 20, hard mask layer window 21, first conductive polysilicon A deposition hole 22 , a first insulating oxide material layer 23 , a first conductive polysilicon material layer 24 , a second insulating o...
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The invention relates to a power MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) device of a novel groove structure and a manufacture method thereof. The unit cell of the element zone of the power MOSFET device adopts groove structure; an insulating oxide layer is arranged in the unit cell groove; the thickness of a second isolated gate oxide layer in the unit cell groove is more thanthe thickness of a first isolated gate oxide layer; conductive polysilicon is deposited in the cell unit groove; the extending distance of the first conductive polysilicon is more than the extending distance of the second conductive polysilicon in the unit cell groove; the groove mouth of the unit cell groove is covered by an insulating medium layer; a source electrode contact hole is filled withsecond contract hole filling metal; the second contract hole filling metal, a first conductive type filling zone and a second conductive type layer are in ohmic contact; source electrode metal is arranged above the unit cell groove; the source electrode metal and the second contact hole filling metal are electrically connected; and the first conductive polysilicon, the source electrode metal and the like are in potential connection. The power MOSFET device has the advantages of low conduction resistance, small grid leak electric charge Qgd, low switching speed, low switching loss, simple technology and low cost.
Description
technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a novel trench structure power MOSFET device and a manufacturing method thereof, belonging to the technical field of semiconductor devices. Background technique [0002] Super Junction (Super Junction) theory and super junction structure have been widely used in a variety of power MOSFET devices, especially in the 500V to 900V planar power MOSFET device series, which has become the mainstream of this voltage series products, which is mainly Compared with ordinary power MOSFETs, power MOSFETs with super-junction structures have greatly reduced characteristic on-resistance (the product of on-resistance and the area of the active area of the chip) and greatly increased switching speed, thereby reducing the cost of the entire system using this product. power consumption, significantly improving energy efficiency. [0003] The most important condition a...
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Patent Timeline
14 Dec 2011
Publication
CN102280487A
- IPC
- H01L29/78; H01L29/06; H01L21/336; H01L21/265
- CPC
- H01L29/7813; H01L29/407; H01L29/66734
- Inventors
- 朱袁正; 叶鹏