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Deep trench liner removal process

一种衬里、沟槽的技术，应用在放电管、电气元件、半导体/固态器件制造等方向

Inactive Publication Date: 2011-06-08
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, practical integration of current high-k dielectric materials is currently under evaluation and encountering various problems

Method used

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  • Deep trench liner removal process
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Embodiment Construction

[0017] In the following description, specific details are set forth for purposes of illustration and not limitation, such as specific geometries of processing systems, descriptions of the various components and processes used therein. However, it should be understood that the invention may be practiced in other embodiments that do not conform to the specific details described above.

[0018] Similarly, for purposes of illustration, specific quantities, materials and structures are set forth to enable a thorough understanding of the invention. However, the invention may be practiced without the specific details described above. Furthermore, it should be understood that the various embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.

[0019] Reference throughout this specification to "one embodiment" or "an embodiment" or variations thereof means that a particular feature, structure, material, or characteristic described in...

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Abstract

The present invention describes a deep trench liner removal process, wherein an excess portion of a conformal liner formed in a trench is substantially removed while reducing or minimizing damage to a bulk fill material in the trench.

Description

technical field [0001] The present invention relates to methods of liner removal, and more particularly to methods of liner removal that substantially remove excess portions of conformal liners formed in trenches while reducing or minimizing damage to bulk fill material in the trenches. Background technique [0002] High dielectric constant (high-k) materials are expected to be used as capacitive dielectrics in future generations of electronic devices. The first high-k materials used as capacitor dielectrics were tantalum oxide and aluminum oxide materials. At present, hafnium-based dielectrics are expected to enter the production of gate dielectrics, thereby replacing the current silicon oxide and silicon oxynitride materials. [0003] However, actual integration of current high-k dielectric materials is currently under evaluation and encountering various problems. For example, after conformal deposition of the capacitive dielectric in a capacitor trench, when an etch pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/316H01L21/311H01L21/31
CPCH01L21/31122H01J37/321H01J37/32449H01J37/32192H01J37/32165H01J37/32091H01L21/6831H01L29/66181H01L21/6719H01L21/31144H01J37/3266H01L21/67253H01L21/67069
Inventor 文·梁阿基特若·高
Owner TOKYO ELECTRON LTD
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