Unlock instant, AI-driven research and patent intelligence for your innovation.

High-speed and high-power semiconductor light source

A high-power, semiconductor technology, used in semiconductor lasers, lasers, laser components, etc., can solve the problems of high cost, difficult packaging, low coupling efficiency, etc., and achieve the effect of suppressing interference

Inactive Publication Date: 2012-07-11
SHENZHEN UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the high-speed and high-power light source produced by this method has the disadvantages of bulky, difficult packaging, low coupling efficiency, large optical power loss, and high cost.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-speed and high-power semiconductor light source
  • High-speed and high-power semiconductor light source
  • High-speed and high-power semiconductor light source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] figure 1 For the structure diagram of the high-speed and high-power semiconductor light source of the present invention, please refer to figure 1 As shown, it includes a main oscillation part 101 and a power amplification part 102 . Among them, the main oscillation part 101 is arranged at the starting end of the high-speed high-power semiconductor light source on the optical path, and the power amplification part 102 is arranged behind the main oscillation part 101, and there is an isolation groove 122 in the middle to isolate the two parts.

[0020] figure 2 for figure 1 The top view of the high-speed high-power semiconductor light source shown. see figure 2 As shown, the main oscillator part 101 can be a single-mode main oscillator: for example, a distributed Bragg reflection laser diode or a distributed feedback laser diode. Taking the distributed feedback laser diode as an example, the active region width (optical waveguide width) W of the main oscillation pa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a high-speed and high-power semiconductor light source. The high-speed and high-power semiconductor light source comprises a p electrode, an n electrode, a main oscillating part and a power amplifying part, wherein the p electrode and the n electrode are arranged oppositely; the main oscillating part is a single-mode high-speed distributed feedback laser diode (DFB-LD) ordistribute bragg reflection laser diode (DBR-LD); the power amplifying part is positioned behind the main oscillating part; and an inclination angle is formed between the main axis of the power amplifying part and the main axis of the main oscillating part. The high-speed and high-power semiconductor light source further comprises an isolation groove, wherein the isolation groove is arranged on the p electrode and is positioned between the main oscillating part and the power amplifying part. The high-speed and high-power semiconductor light source can effectively inhibit light feedback and interference among electric signals, has the potential ability of directly modulating and outputting high-speed and high-power light signals, and can obtain directly modulated output light power with several MHz and watt through modulation current with hundreds of milliampere and direct current with amperes.

Description

【Technical field】 [0001] The invention relates to a semiconductor laser light source, in particular to a high-speed and high-power semiconductor light source. 【Background technique】 [0002] The output power of semiconductor lasers used in ordinary communications is generally at the milliwatt level, which cannot meet the needs of high-speed and high-power light sources such as wireless optical communication systems. At present, the method of realizing high-speed and high-power light source is to use semiconductor laser + erbium-doped fiber amplifier, which can obtain a modulation rate of 2.5Gb / s and an output optical power of 100 milliwatts. However, the high-speed and high-power light source produced by this method has the disadvantages of bulky, difficult packaging, low coupling efficiency, large optical power loss, and high cost. 【Content of invention】 [0003] The technical problem solved by the present invention is to provide a high-speed and high-power semiconductor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/00H01S5/06
Inventor 柴广跃王少华
Owner SHENZHEN UNIV