Temperature controlled showerhead for high temperature operations

Abstract

A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. Temperature is controlled using feedback supplied by a temperature sensor installed in the stem and in thermal contact with the face plate.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Patent Application Serial No. 12 / 642,497, filed December 18, 2009, which is incorporated herein by reference. Background technique [0003] Chemical vapor deposition (CVD) chambers typically contain showerheads with perforated or porous planar surfaces to distribute reactants and carrier gases in a uniform manner over a second parallel planar surface, such as a semiconductor substrate surface. The substrate may be heated to a process temperature at which the precursors react to result in the deposition of a film on the surface of the substrate. Showerhead reactors or parallel plate reactors facilitate plasma enhanced processes such as plasma enhanced chemical vapor deposition (PECVD). A substrate support (eg, standoff) can be grounded and used as one of the electrodes. The shower head may serve as another electrode to which RF power is applied. In another configuration, RF power...

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Problems solved by technology

In addition, temperature changes may be caused by other longer-lasting changes in the system, such as drifts in the surface emissivity of the showerhead

Variable temperature ...

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