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Manufacturing method of metal oxide semiconductor field effect transistor

A technology of oxide semiconductors and field effect transistors, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems that affect device performance and design size shortening

Active Publication Date: 2012-08-22
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The invention solves the problem that the channel length is shortened relative to the design size in the manufacturing process of the metal oxide semiconductor field effect transistor in the prior art, which affects the performance of the device

Method used

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  • Manufacturing method of metal oxide semiconductor field effect transistor
  • Manufacturing method of metal oxide semiconductor field effect transistor
  • Manufacturing method of metal oxide semiconductor field effect transistor

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Experimental program
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Embodiment approach

[0023] refer to Figure 5 As shown, an embodiment of the manufacturing method of the metal oxide semiconductor field effect transistor of the present invention includes:

[0024] Step s1, forming a first trench in the substrate;

[0025] Step s2, forming sidewalls on the sidewalls of the first trench;

[0026] Step s3, epitaxially growing a conductive layer in the first trench surrounded by sidewalls;

[0027] Step s4, performing light doping implantation and source / drain implantation on the substrate successively to form source / drain regions;

[0028] Step s5, removing the sidewall to form a second trench;

[0029] Step s6, forming a gate dielectric layer on the surface of the substrate and in the second trench;

[0030] Step s7, forming a gate on the gate dielectric layer.

[0031] In the above embodiments, before forming the gate, the source / drain regions are formed first. By adjusting the process order relative to the prior art, it is possible to avoid the influence ...

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Abstract

The invention relates to a manufacturing method of a metal oxide semiconductor field effect transistor, which comprises the following steps of: forming a first groove in a substrate; forming a side wall on a jamb of the first groove; epitaxially growing a conductive layer in the first groove encircled by the side wall; constantly carrying out light doping injection and source / drain injection on the substrate; removing the side wall to form a second groove; forming a gate dielectric layer on the surface of the substrate and in the second groove; and forming a grid electrode on a gate oxide layer. The manufacturing method of the metal oxide semiconductor field effect transistor can effectively inhibit short channeling effect and obtain better device performance.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a method for manufacturing metal oxide semiconductor field effect transistors. Background technique [0002] Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a semiconductor device widely used in integrated circuits. refer to figure 1 As shown, the basic structure of a metal oxide semiconductor field effect transistor includes: a substrate 10, a gate oxide layer 11 on the substrate 10, a gate 12 on the gate oxide layer 11, and sources in the substrate 10 on both sides of the gate 12. Region 13, drain region 14. [0003] For example, in Chinese patent application 00134849.3, a conventional manufacturing method of a metal oxide semiconductor field effect transistor is mentioned, which includes: sequentially forming a gate oxide layer and a gate on the substrate, and then lightly forming the gate on both sides of the substrate. Doping implantation, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336
Inventor 李奉载
Owner SEMICON MFG INT (SHANGHAI) CORP
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