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Projection system, lithographic apparatus, method of projecting a beam of radiation onto a target and device manufacturing method

A projection system and radiation beam technology, applied in the field of projection systems, can solve problems such as small errors and errors

Active Publication Date: 2011-07-13
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, even for such systems, small errors may be introduced
Such small errors are not significantly problematic for previously known systems

Method used

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  • Projection system, lithographic apparatus, method of projecting a beam of radiation onto a target and device manufacturing method
  • Projection system, lithographic apparatus, method of projecting a beam of radiation onto a target and device manufacturing method
  • Projection system, lithographic apparatus, method of projecting a beam of radiation onto a target and device manufacturing method

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0017] figure 1 A lithographic apparatus according to an embodiment of the present invention is schematically shown. The equipment includes:

[0018] an illumination system (illuminator) IL configured to condition a radiation beam B (eg, ultraviolet (UV) radiation or extreme ultraviolet (EUV) radiation);

[0019] a support structure (e.g. a mask table) MT configured to support a patterning device (e.g. a mask) MA and connected to a first positioning device PM configured to precisely position the patterning device according to determined parameters;

[0020] a substrate table (e.g. a wafer table) WT configured to hold a substrate (e.g. a resist-coated wafer) W and connected to a second positioner PW configured to precisely position the substrate according to determined parameters ;and

[0021] A projection system (e.g. a refractive projection lens system) PS configured to project the pattern imparted to the radiation beam B by the patterning device MA onto a target portion C...

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Abstract

A projection system (PS) is provided that includes a sensor system (20) that measures at least one parameter that relates to the physical deformation of a frame (10) that supports the optical elements (11) within the projection system (PS), and a control system (30) that, based on the measurements from the sensor system (20.), determines an expected deviation of the position of the beam of radiation projected by the projection system (PS) that is caused by the physical deformation of the frame (10).

Description

technical field [0001] Embodiments of the invention relate to a projection system, a lithographic apparatus, a method of projecting a beam of radiation onto a target, and a method of fabricating a device. Background technique [0002] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually to a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Typically, the pattern is transferred via imaging to a layer of radiation sensitive material (resist) provided on the substrate. Typically, a single substrate will contain a network of successively patterned adj...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70483G03F7/70833G03F7/70258G03F7/2008H01L21/0275G03F7/706847
Inventor H·巴特勒R·德琼M·范德威吉斯特R·吐圣恩M·奥登耐蒙斯A·考沃埃特斯
Owner ASML NETHERLANDS BV