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Si-Sb-Te phase change material for phase change storage

A phase change memory, si-sb-te technology, applied in the direction of electrical components, etc., to achieve the best device operation stability and speed, and the best data retention effect

Active Publication Date: 2011-07-20
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the optimal atomic ratio of each element of Si-Sb-Te material as a phase change memory material has not been known before.

Method used

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  • Si-Sb-Te phase change material for phase change storage
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Embodiment Construction

[0019] The inventor of the present invention has carried out the following research and analysis in order to seek the Si-Sb-Te material that is most suitable for making phase-change memory:

[0020] The atomic number ratio of Sb and Te elements in Si-Sb-Te is adjusted so that the Si-Sb-Te material has a simple phase composition after phase transformation. The study found that in Te-rich Si 2 Sb 2 Te 6 After the material phase transition, obvious Te phase separation appeared in the material. However, in Si with a ratio of Sb to Te atoms of 2:3 x Sb 2 Te 3 After the phase transition of the material, no Te phase separation occurs in the material. The phase separation of the Te element in the Te-rich Si-Sb-Te material will lead to a decrease in the uniformity of the material, which will affect the consistency of the operating parameters and the stability of the cycle operation of the phase change memory prepared by the phase change material, which is unfavorable. Performanc...

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PUM

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Abstract

The invention discloses a Si-Sb-Te phase change material for a phase change storage. The chemical formula of the Si-Sb-Te phase change material is SixSb2Te3, wherein x is more than 0 and is less than or equal to 4, and the conversion between a high resistance value and a low resistance value is realized under the function of electric signals. By comprehensive study on a Te-enriched Si2Sb2Te6 material and a SixSb2Te3 material with different contents of Si, the fact that the heat stability of the SixSb2Te3 material is superior to that of a Ge2Sb2Te5 material and that of the Si2Sb2Te6 material and no Te phase splitting of the Si2Sb2Te6 material occurs in the phase change of the SixSb2Te3 material is discovered. Due to increase of the content of Si in the SixSb2Te3 material, the data retention capability of the material is improved, the requirement on long-time and stable information storage is met, simultaneously the volume change of the material in the phase change process can be reduced, and the adhesive force between the material and the substrate is improved. By study, when x is more than or equal to 3 and is less than or equal to 3.5, the SixSb2Te3 material is most suitable for preparing the phase change storage.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing materials, in particular to a series of storage medium materials used for manufacturing resistance switching phase change memories. Background technique [0002] Memory is an important part of the current semiconductor market and the cornerstone of information technology, playing an important role in both life and the national economy. At present, memory storage products mainly include: flash memory, disk, dynamic memory, static memory, etc. Other non-volatile technologies: ferroelectric RAM, magnetic RAM, carbon nanotube RAM, resistive RAM, copper RAM (Copper Bridge), holographic storage, single electron storage, molecular storage, polymer storage, racetrack storage (Racetrack Memory), probe memory (Probe Memory), etc. as candidates for next-generation memory have also been extensively studied. Each of these technologies has its own characteristics, but most of them are still in the s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 饶峰宋志棠吴良才任堃周夕淋
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI