Semiconductor process, semiconductor component and package structure with semiconductor component

Abstract

The invention relates to a semiconductor process, a semiconductor component and a package structure with the semiconductor component. The semiconductor process comprises the following steps of: (a) providing the semiconductor component which comprises a silicon substrate and at least one conductive hole structure; (b) removing a part of the silicon substrate to form a first surface, wherein the conductive hole structure protrudes out of the first surface of the silicon substrate to form a through hole structure; (c) forming a passivation layer to cover the through hole structure, wherein the passivation layer is made of a photosensitive material; (d) providing a photomask and covering a part of the passivation layer; (e) providing a light source to irradiate the uncovered part of the passivation layer; and (f) removing a part of the passivation layer so as to expose the through hole structure on the first surface of the passivation layer. Thus, the part of the passivation layer on thethrough hole structure can be completely removed to ensure that the yield of the through hole structure to external electrical connection is guaranteed.

Description

technical field [0001] The present invention relates to a semiconductor process, a semiconductor component and a packaging structure with the semiconductor component, in particular, to a semiconductor component process with a through-hole structure, a semiconductor component and a packaging structure with the semiconductor component. Background technique [0002] refer to figure 1 and figure 2 , showing a schematic cross-sectional view of a known semiconductor component and a partially enlarged view thereof. The known semiconductor device 1 has a silicon substrate 11 , at least one electrical device 12 , at least one through hole structure 13 , a passivation layer 14 and a redistribution layer 15 . The silicon substrate 11 has a first surface 111 , a second surface 112 and at least one groove 113 . The groove 113 is opened on the first surface 111 . The electrical component 12 is located in the silicon substrate 11 and exposed on the second surface 112 of the silicon su...

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Problems solved by technology

However, when the protective layer 14 is gradually removed to expose the first end 131 of the through-via structure 13, the charges accumulated in the first end 131 of the through-via structure 13 gradually increase, and the plasma begins to be repelled. , resulting in reduced impact of the plasma on the first end 131 of the through-via structure 13, and the protection layer 14 located thereon cannot be completely removed.

Finally, part of the protective layer 14 remains on the first end 131 of the through via structure 13, as figure 1 and figure 2 As shown in the region A of , the yield rate of the electrical connection between the through via structure 13 and the redistribution layer 15 is reduced

In addition, the first end 131 of the TSV structure 13 is only exposed on the first surface 111 of the silicon substrate 11, but not on the surface 141 of the protective layer 14, so the process of forming the redistribution layer 15 is relatively complicated.

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