Manufacturing method for apparatus and semiconductor device

Abstract

The present disclosure provides an apparatus that includes a semiconductor device and a manufacturing method for the semiconductor device. The semiconductor device includes a substrate. The semiconductor device also includes a first gate dielectric layer that is disposed over the substrate. The first gate dielectric layer includes a first material. The first gate dielectric layer has a first thickness that is less than a threshold thickness at which a portion of the first material of the first gate dielectric layer begins to crystallize. The semiconductor device also includes a second gate dielectric layer that is disposed over the first gate dielectric layer. The second gate dielectric layer includes a second material that is different from the first material. The second gate dielectric layer has a second thickness that is less than a threshold thickness at which a portion of the second material of the second gate dielectric layer begins to crystallize. The invention achieves a high crystallization temperature without an increased overall thickness and without being doped.

Description

technical field [0001] The invention relates to a device and a manufacturing method of a semiconductor element, in particular to a gate of the semiconductor element. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. Improvements in integrated circuit (IC) material technology have produced several generations of integrated circuits, each generation more complex than the previous generation. However, the above-mentioned developments all make the process and manufacture of ICs more complicated. Therefore, corresponding progress is required in IC processes to realize advanced integrated circuits. Current IC manufacturing techniques require one or more relatively high temperature annealing processes, however, these high temperature annealing processes may cause a portion of the gate of an integrated circuit (IC) to crystallize. The crystallized part of the gate provides a carrier transmission path and may cause leakage cur...

AI Technical Summary

Problems solved by technology

However, the above-mentioned developments have made the process and manufacture of ICs more complicated. Therefore, corresponding progress in IC processes is required to realize advanced integrated circuits.

Today's IC manufacturing techniques require one or more relatively high temperature annealing processes, however, these high temperature annealing processes may cause part of the integrated circuit (IC) gate to crystallize

The crystallized part of the gate provides a carrier transport path and may cause gate leakage current

[0003] Thus, although current methods of manufacturing semiconductor gates generally achieve their intended purpose, they are not entirely satisfactory in every respect.

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