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Method for growing solar cell film

A solar cell and growth method technology, applied in the field of solar cell manufacturing, can solve the problems of poor quality and slow growth rate of dry oxygen, and achieve the effects of low stress, fast growth rate and few defects

Active Publication Date: 2012-06-06
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The growth of oxide film is divided into dry oxygen growth and wet oxygen growth. The dry oxygen growth rate is slow and the quality is good, while the wet oxygen growth rate is fast and the quality is poor.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Select an N-type single crystal silicon wafer with a crystal plane (100) and a doping concentration of 1.5Ωcm. After slicing, the silicon wafers are subjected to a conventional cleaning process, and the surface is textured.

[0018] 1. Send the silicon wafer into the oxidation furnace tube at a low temperature of 600°C

[0019] 2. While blowing nitrogen, the furnace tube is heated up to the oxidation temperature required for oxidation of 950°C, where the flow rate of nitrogen is 5 liters / minute

[0020] 3. After the temperature stabilizes, turn off the N 2 gas. Oxygen is introduced, and the oxygen flow rate is 5 liters / minute; after 2 minutes, TCA (tricarboxylic acid cycle) gas is introduced, and the gas flow rate is 0.3 liters / minute, and water vapor H is introduced at the same time. 2 O, the gas flow rate is 1 liter / min. The oxidation time is 10 minutes, and the oxide film is 30nm.

[0021] 4. Turn off the TCA gas and water vapor, continue to ventilate oxygen for...

Embodiment 2

[0028] Select a P-type polysilicon wafer with a crystal plane (100) and a doping concentration of 3Ωcm. After slicing, the silicon wafers are subjected to a conventional cleaning process, and the surface is textured.

[0029] 1. Send the silicon wafer into the oxidation furnace tube at a low temperature of 500°C

[0030] 2. While nitrogen is flowing, the furnace tube is heated up to the oxidation temperature required for oxidation of 900°C, where the flow rate of nitrogen is 6 liters / minute

[0031] 3. After the temperature stabilizes, turn off the nitrogen. Introduce oxygen, the oxygen flow rate is 5 liters / minute; after 3 minutes, pass in DCE (CH2Cl2) gas, the gas flow rate is 0.5 liters / minute, and at the same time pass in water vapor H 2 O, the gas flow rate is 2 liters / minute. Oxygen was passed for 5 minutes, and the oxide film was 15nm.

[0032] 4. Turn off the DCE gas and water vapor, and continue to ventilate oxygen for 2 minutes, with an oxygen flow rate of 5 lite...

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Abstract

The invention relates to the technical field of solar cell manufacture, in particular to a method for growing a film. The method comprises the following main steps of: performing surface texture etching on a solar crystal silicon chip, conveying the silicon chip to an oxidation furnace to perform an oxidation process, annealing the oxide film, and then performing subsequent solar cell processes. The oxide film has high growth speed, high quality and excellent passivation performance; the silicon chip enters a furnace tube at a low temperature, so the oxide film has low stress and few defects;and the oxidation process and the annealing process are performed in the same equipment, and the yield is high.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing, in particular to a thin film growth method. Background technique [0002] The power generation of silicon solar cells is determined by the conversion efficiency of the cells, and the passivation of crystalline silicon photovoltaic cells is crucial to the conversion efficiency. Passivation is divided into bulk passivation and surface passivation. Now the silicon nitride passivation film is commonly used on the front side of crystalline silicon solar cells, and the printed aluminum back field passivation is used on the back side. The passivation performance of single-layer silicon nitride is limited, and double-layer passivation and multi-layer passivation can greatly improve the passivation performance of the battery. Especially the back passivation on the back of the battery can greatly improve the performance of the back passivation and improve the conversion efficiency of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 刘亚锋
Owner TRINA SOLAR CO LTD
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