Method for manufacturing metal oxide thin film transistor
A technology for oxide thin films and transistors, applied in the manufacture of transistors, semiconductor/solid-state devices, electrical components, etc., can solve the problems of high processing cost, long time required for the manufacturing process, etc., to reduce costs and time, save preparation steps, The effect of simplifying device structure and process flow
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Embodiment 1
[0035] like Figure 4 As shown, this embodiment includes the following steps:
[0036] N10: Deposit a layer of gate electrode film on the substrate and form the required pattern through photolithography and etching.
[0037] N20: Deposit a layer of gate insulating layer material.
[0038] N30 deposits a layer of metal oxide, controls the process conditions to make it semiconducting, and forms the desired pattern through photolithography and etching.
[0039] N40 deposits a drain electrode layer and forms the required pattern through photolithography and etching.
[0040] N50 deposits a device protection layer.
[0041] N60 forms contact holes through processes such as photolithography and etching.
[0042] N70 converts the exposed oxide film into a conductor by vacuum annealing.
[0043] In the process step N10, the film forming process usually adopts magnetron sputtering technology, and the target material adopts AlNd and MoNb alloy; the etching process adopts traditiona...
Embodiment 2
[0051] like Figure 5 As shown, the process steps of this embodiment are similar to those of Embodiment 1, except that the final step is an annealing treatment (N80) in a reducing atmosphere to realize the transformation of the oxide material from a semiconductor to a conductor.
[0052] In the process step N80, the sample is heated to 300° C. under a reducing atmosphere such as hydrogen or nitrogen, kept for 20 minutes, and then cooled in air. Increase the carrier concentration of the treated metal oxide film to 10 20 above, thus presenting the characteristics of a conductor.
Embodiment 3
[0054] like Figure 6 As shown, the process steps of this embodiment are similar to those of Embodiment 1, except that the last step is plasma treatment (N90) to realize the transformation of the oxide material from semiconductor to conductor.
[0055] In the process step N90, the sample is placed in a vacuum chamber, and the sample is subjected to plasma surface treatment with argon plasma for 1 to 3 minutes, and the discharge power is 150W. Increase the carrier concentration of the treated metal oxide film to 10 20 above, thus presenting the characteristics of a conductor.
[0056] The process flow in the above-mentioned embodiments 1-3 usually only needs four reticles (N10, N30, N40, N60). figure 2 The conventional flow (T10, T30, T40, T60, T70) shown reduces one reticle, which reduces the cost required for manufacturing. In addition, compared with the traditional process, the above process does not require additional process steps such as film formation of the pixel el...
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Abstract
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