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Epitaxial growth method of W type antimonide class II quantum well

An epitaxial growth and quantum well technology, applied in the field of semiconductors, can solve problems such as wide bandgap and immature semiconductor optoelectronic devices

Active Publication Date: 2012-08-08
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional Si-based and GaAs-based materials have relatively wide band gaps, which cannot meet the requirements for wavelengths, while antimonide (GaSb-based) materials have relatively narrow band gaps, so they have become the main research objects in this band.
At present, no matter in terms of materials or devices, semiconductor optoelectronic devices in the mid-infrared 2-5μm band are not mature enough.

Method used

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  • Epitaxial growth method of W type antimonide class II quantum well
  • Epitaxial growth method of W type antimonide class II quantum well
  • Epitaxial growth method of W type antimonide class II quantum well

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Embodiment Construction

[0019] see figure 1 As shown, the present invention provides a method for epitaxial growth of a "W" type antimonide type II quantum well, comprising the following steps:

[0020] Step 1: Select a substrate 10, which is a GaSb (001) substrate;

[0021] Step 2: Perform deoxidation and degassing treatment on the substrate 10 and observe the surface reconstruction, which means that the deoxidation temperature is 630°C, then raise the temperature to 660°C for degassing, and then drop to 610°C after 15 minutes, and grow GaSb for 5 minutes After cooling down to 490°C, reconstruction was observed.

[0022] Step 3: On the substrate 10, a buffer layer 11, 10 periods of "W" structure type II quantum well active regions 12 and a GaSb capping layer 13 are sequentially grown, the material of the buffer layer 11 is GaSb, and the 10 Each period of the "W" structure type II quantum well active region 12 of a period comprises: an Al 0.35 Ga 0.65 Sb barrier layer 121, growth time 16s, thickn...

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Abstract

The invention relates to an epitaxial growth method of a W type antimonide class II quantum well, which comprises the following steps: step 1) selecting a substrate; step 2) performing deoxidation and degasification treatment on the substrate, and observing the surface reconstruction; and step 3) sequentially growing a buffer layer, a W-structured class II quantum well active area with 10 cycles and a GaSb cover layer on the substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and mainly relates to a method for growing a two-type "W" type quantum well structure on a GaSb substrate. Background technique [0002] With the development of science and technology, semiconductor lasers in the mid-infrared 2-5μm band have received more and more attention. The main applications are chemical gas detection, communication, biomedicine, and military electronic countermeasures. Traditional Si-based and GaAs-based materials have relatively wide band gaps and cannot meet the requirements for wavelengths, while antimonide (GaSb-based) materials have relatively narrow band gaps, so they have become the main research objects in this band. At present, no matter in terms of materials or devices, semiconductor optoelectronic devices in the mid-infrared 2-5μm band are not yet mature enough. [0003] At present, there are many research directions in the mid-infrared band. In the 2-3μ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343C30B25/20
Inventor 迂修张宇王国伟徐应强徐云宋国峰
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI