Unlock instant, AI-driven research and patent intelligence for your innovation.

Memory readout scheme using separate sense amplifier voltage

A technology of sense amplifier and memory, applied in the field of storage circuit, can solve the problems of unrealistic, timing deviation, slow response and uncomfortable storage operation, etc.

Active Publication Date: 2014-05-14
TAIWAN SEMICON MFG CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is impractical to facilitate dynamic reads and writes by operating large power grids because the slow response is not suitable for storage operations
Also, requires alternating power domain level shifters to introduce some timing skew (delay)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory readout scheme using separate sense amplifier voltage
  • Memory readout scheme using separate sense amplifier voltage
  • Memory readout scheme using separate sense amplifier voltage

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The making and using of preferred embodiments of the invention are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the disclosure.

[0022] figure 1 is a schematic diagram of an exemplary memory circuit with independent sense amplifier voltages. The memory 100 includes a memory cell 102 connected to a data line DL 103 . The memory 100 is set with a first voltage, for example, VDD. The storage unit 102 stores information for a bit (ie, a logical 1 or a logical 0). PMOS transistor 104 is connected to precharge signal RSP (ie, read data line reset) to precharge DL 103 to logic 1 for read operations.

[0023] A read cycle for the memory 100 is initiated by holding RSP to a logic 0 and enabling the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A memory includes a memory cell coupled to a data line. A sense amplifier is coupled to the data line. A power supply node has a first voltage. The first voltage is provided to the sense amplifier. A charge pump circuit is coupled to the sense amplifier. The charge pump circuit is configured to provide a second voltage to the sense amplifier when a read operation is performed.

Description

technical field [0001] The present invention relates generally to integrated circuits and, more particularly, to memory circuits. Background technique [0002] Single-ended readout structures may exist in memory including read-only memory (ROM), random access memory (RAM), or other multi-ported register banks designed to simplify readout structures. In some approaches, the single-ended reader also does not have a sense amplifier (SA) counterpart that does not match the associated double-ended reader. However, the noise margin window for a read "0" operation (actively pulled low) is typically smaller than the window for a read "1" (held in a precharged state). [0003] In order to balance the noise margin window of reading "0" and reading "1", the logic gates used for sensing are usually "high skewed" (higher P / N ratio, i.e., I sat P / I sat N ) to change the trip point of the sense amplifier (ie, the input voltage level at which the output is determined to be a logic 0 or ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/06
CPCG11C7/08
Inventor 杨振麟
Owner TAIWAN SEMICON MFG CO LTD