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Method for fabricating a semiconductor device

A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of component failure, increase component instability, etc., and achieve the effect of increasing stability

Active Publication Date: 2011-08-24
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In some structures, the exposed portion of the rear side 102b of the substrate 102 may provide a carrier transport path in subsequent plasma-related processes, which may increase device instability and / or device failure.

Method used

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  • Method for fabricating a semiconductor device
  • Method for fabricating a semiconductor device
  • Method for fabricating a semiconductor device

Examples

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Embodiment Construction

[0044] A number of different embodiments or examples are provided below to implement the features of the various embodiments of the invention. The following will briefly describe the structure and arrangement of specific embodiments. Of course, the following description is only an example, but not intended to limit the present invention. For example, a statement that a second element is formed "over" or "over" a first element may include embodiments where the first element and the second element are in direct contact, but also include an additional element formed between the first element and the second element. An embodiment in which the first element and the second element are not in direct contact between the second element. In addition, the present invention may have repeated component symbols in each example, but the above repetition is only used to briefly and clearly describe the present invention, and does not mean that there is a necessary relationship between the var...

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Abstract

The disclosure relates to integrated circuit fabrication, and more particularly to a method for fabricating a semiconductor device. An exemplary method for fabricating the semiconductor device comprises providing a substrate; forming pad oxide layers over a frontside and a backside of the substrate; forming hardmask layers over the pad oxide layers on the frontside and the backside of the substrate; and thinning the hardmask layer over the pad oxide layer on the frontside of the substrate. The device stability is increased and the efficacy of the device is also increased.

Description

technical field [0001] The invention relates to a method for manufacturing an integrated circuit, in particular to a method for manufacturing a semiconductor element. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. Improvements in integrated circuit (IC) material technology have produced several generations of integrated circuits, each generation more complex than the previous generation. However, the above-mentioned developments all make the process and manufacture of ICs more complicated. Therefore, corresponding progress is required in IC processes to realize advanced integrated circuits. [0003] Figure 1A-Figure 1C Cross-sectional views of various stages of conventional semiconductor device fabrication are shown, wherein the substrate 102 includes a front side 102a and a back side 102b. Figure 1A A structure formed by a conventional isolation process is disclosed, including: forming a pad oxide layer 112a, 11...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065
CPCH01L21/3081H01L21/76232
Inventor 周汉源朱鸣张立伟庄学理
Owner TAIWAN SEMICON MFG CO LTD