Growth method of graphene and graphene

A growth method and graphene technology, applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., to avoid wrinkles and cracks, and simplify the preparation process.

Active Publication Date: 2013-02-06
SUZHOU NANOWIN SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a method for growing a III-nitride substrate and the substrate thereof, which can avoid wrinkles and cracks during the transfer of graphene, and the transferred graphene and the transferred target The problem of weak bonding between substrates

Method used

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Examples

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Embodiment Construction

[0015] The method for growing a graphene substrate provided by the present invention and the specific implementation of the substrate will be described in detail below by taking a GaN substrate as an example.

[0016] The first step: place the GaN substrate in the quartz tube, and then place the quartz tube in the central area of ​​the electric furnace.

[0017] The second step: at a rate of 150-1500sccm, preferably 150sccm, pass non-oxidizing gas such as nitrogen, inert gas or its mixture into the quartz tube for at least 60 minutes, then start heating, and a liquid film composed of Ga simple substance is formed on the surface of the GaN substrate .

[0018] Step 3: When the temperature in the central area of ​​the electric furnace reaches 600-1200°C, preferably 700°C, a carbon-containing substance is introduced into the non-oxidizing gas as a carbon source, and the reaction begins, and carbon is deposited on the surface of the GaN substrate to form graphene. The carbon-cont...

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Abstract

The invention discloses a growth method of graphene, which comprises the following steps of: providing an III-nitride substrate; placing the III-nitride substrate in a central area of a flat heater; introducing non-oxidizing gas to the surface of the III-nitride substrate; heating the III-nitride substrate; introducing carbonaceous materials to the surface of the III-nitride substrate as a carbon source for growing the graphene; and stopping introducing the carbon source, and continuing to introduce the non-oxidizing gas for protection and reducing the temperature to the room temperature.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices and processes, in particular to a graphene growth method and a substrate thereof. Background technique [0002] The principle of chemical vapor deposition is that a gaseous compound generates a variety of single atoms under the action of high temperature, catalysis, etc., and one or more single atoms interact to form new substances and deposit on the surface of the substrate. This method is the most common deposition technique in the semiconductor industry. [0003] Group III nitrides mainly include AlN, GaN, InN and their alloys. Due to their excellent optoelectronic properties, they have become representative materials for new-generation semiconductor devices. As a typical representative of group III nitrides, the research and application of GaN materials is the frontier and hotspot of global semiconductor research. It is a new type of semiconductor material for the development o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/18C30B29/02
Inventor 刘争晖王建峰钟海舰任国强蔡德敏徐耿钊樊英民徐科
Owner SUZHOU NANOWIN SCI & TECH
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