Ultrasonic detection defect information acquisition method based on multi-wafer probe

Abstract

The invention relates to an ultrasonic detection defect information acquisition method based on a multi-wafer probe. The method comprises the following steps: a detected object is scanned by an ultrasonic probe with N wafers, the wafers are arranged uniformly, and each wafer has functions of transmission and reception; and a data matrix of probe sampling is obtained through controlling states of transmission and reception of each wafer in scanning, and defect characteristics can be reconstructed through the data matrix. In the invention, a mode of transmission by one wafer and reception by a plurality of wafers is formed in scanning by the array wafers, that is, any point on surfaces of a reflector corresponds to a plurality of measure informations for reconstructing the point, and reconstruction information of the whole reflector is finally obtained through synthesizing, so the resolution and the sensitivity are improved.

Description

technical field [0001] The invention relates to a method for collecting defect information in ultrasonic detection based on a polycrystalline probe. Background technique [0002] The quantitative evaluation method of ultrasonic testing is a difficult problem that non-destructive testing professionals and applied physicists are constantly striving to overcome. Although many literatures have discussed defect assessment techniques and methods, such as the conference journal of quantitative assessment of non-destructive testing, so far, no techniques and methods for quantitative assessment of ultrasonic defect display have been seen. The defect quantitative assessment method of ultrasonic testing needs to accurately measure the position and geometric shape of the defect display, so as to facilitate the further judgment of the defect type (crack, inclusion, unfused, etc.) and shape (orientation, size). The defect data obtained by ultrasonic testing is crucial for assessing the r...

AI Technical Summary

Problems solved by technology

However, this best resolution can only be achieved with single-element probes for point-like defects

For planar reflectors (such as cracks, unfused, etc.), due to the superposition of the sound field emitted by the probe and the reflected sound field of the planar reflector, the signal that can be used to generate the synthetic aperture of the reflector is very limited; therefore, the high-resolution synthetic sound field of planar defects Can only be achieved in the near-field region, not in the far-field region

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