Ultrasonic detection defect information acquisition method based on multi-wafer probe

A technology of ultrasonic detection and information collection, applied in the direction of material analysis using acoustic wave emission technology, can solve the problem of limited signal and achieve the effect of improving resolution and sensitivity

Active Publication Date: 2011-10-19
SUZHOU NUCLEAR POWER RES INST +2
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  • Abstract
  • Description
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Problems solved by technology

However, this best resolution can only be achieved with single-element probes for point-like defects
For planar reflectors (such as cracks, unfused, etc.), due to the superposition of the sound field emitted by the probe and the reflected sound field of the pl

Method used

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  • Ultrasonic detection defect information acquisition method based on multi-wafer probe
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  • Ultrasonic detection defect information acquisition method based on multi-wafer probe

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Embodiment Construction

[0022] Below in conjunction with accompanying drawing, preferred specific embodiment of the present invention is described:

[0023] like image 3 As shown, the defect information collection method of the present invention adopts polycrystalline probes, that is, the probes are evenly distributed and arranged by a plurality of wafers. Each chip has receive and transmit functions. In this embodiment, a plurality of wafers are arranged in a row to form a linear arrangement.

[0024] The probe can form a synthetic aperture, and the image of the plane reflector can be reconstructed through the matrix containing the reflector information. For the sensitivity of the plane reflector, the scanning method is much larger than that of the large-aperture single-crystal probe. The information collected by the probe can be represented by an information data matrix A, as shown in Table 1 below. A ij Indicates the ultrasonic signal received by chip j in the phased array when chip i in the ...

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Abstract

The invention relates to an ultrasonic detection defect information acquisition method based on a multi-wafer probe. The method comprises the following steps: a detected object is scanned by an ultrasonic probe with N wafers, the wafers are arranged uniformly, and each wafer has functions of transmission and reception; and a data matrix of probe sampling is obtained through controlling states of transmission and reception of each wafer in scanning, and defect characteristics can be reconstructed through the data matrix. In the invention, a mode of transmission by one wafer and reception by a plurality of wafers is formed in scanning by the array wafers, that is, any point on surfaces of a reflector corresponds to a plurality of measure informations for reconstructing the point, and reconstruction information of the whole reflector is finally obtained through synthesizing, so the resolution and the sensitivity are improved.

Description

technical field [0001] The invention relates to a method for collecting defect information in ultrasonic detection based on a polycrystalline probe. Background technique [0002] The quantitative evaluation method of ultrasonic testing is a difficult problem that non-destructive testing professionals and applied physicists are constantly striving to overcome. Although many literatures have discussed defect assessment techniques and methods, such as the conference journal of quantitative assessment of non-destructive testing, so far, no techniques and methods for quantitative assessment of ultrasonic defect display have been seen. The defect quantitative assessment method of ultrasonic testing needs to accurately measure the position and geometric shape of the defect display, so as to facilitate the further judgment of the defect type (crack, inclusion, unfused, etc.) and shape (orientation, size). The defect data obtained by ultrasonic testing is crucial for assessing the r...

Claims

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Application Information

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IPC IPC(8): G01N29/14
Inventor 陈怀东李明刘金宏单洪彬吕天明肖学柱袁书现
Owner SUZHOU NUCLEAR POWER RES INST
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