Light-emitting element

Abstract

A light-emitting element forming a two-electrode structure on one face of a semiconductor light-emitting functional layer can obtain uniform luminous intensity along the length direction. The semiconductor light-emitting functional layer (20) which is formed on a Si substrate (11) has a laminating structure composed of a N type GaN layer (a first semiconductor layer) (21), a MQW layer (22), and a P type GaN layer (a second semiconductor layer) (23). A surface (a main face) of the P type GaN layer forms a transparent electrode (31) by extending from the other end part (the left end part) side towards the right end part side. An N-side electrode (34) is formed on the right end part side area. A P-side electrode (33) is formed on the left end part side area. The width of the transparent electrode (31) is gradually increasing from the left end part to the right end part. Therefore, the transparent electrode (31) limits the expansion of a current flowing vertically inside the MQW layer (22) on a side adjacent to the P-side electrode (33).

Description

technical field [0001] The present invention relates to the structure of a light-emitting element that emits light using a semiconductor as a structural material, and particularly relates to the structure of a linear light-emitting element. Background technique [0002] Semiconductor light emitting diodes (LEDs) are used for various purposes. For example, lighting equipment using light-emitting diodes has lower power consumption and lower heat generation than conventional incandescent bulbs and fluorescent lamps, and thus is expected to replace incandescent bulbs and fluorescent lamps in the future. Here, the p-type semiconductor layer and the n-type semiconductor layer in the LED are generally formed by epitaxial growth, ion implantation, and the like. Therefore, a pn junction surface is formed parallel to the surface of the semiconductor wafer, and electrodes connected to the p side and electrodes connected to the n side are assigned to the upper and lower surfaces of the...

AI Technical Summary

Problems solved by technology

In the case where the resistance of the transparent electrode and the p-type GaN layer is negligible, such a problem does not occur, however it is practically difficult to increase the conductivity of the material constituting the transparent electrode and the p-type GaN, thereby reducing their resistance to negligible the degree is difficult

[0011] That is, in a light-emitting element having a structure in which two electrodes are formed on one surface of a semiconductor light-emitting functional layer, it is difficult to obtain uniform luminous intensity in the longitudinal direction.

Such a problem is particularly noticeable when the interval between two electrodes is wide.

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