Power semiconductor devices

By utilizing the connection between the electrode pattern and the metal block and injection molding resin filling in the power semiconductor device, combined with the bending and concave design of the metal lead, the problems of device enlargement and inductance increase are solved, achieving a more compact, lightweight and efficient device. packaging structure.

Active Publication Date: 2011-12-07
MITSUBISHI ELECTRIC CORP
View PDF3 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] It is also conceivable that the metal wiring formed around the power semiconductor element is led out of the device, and the metal terminal is bent and formed on the upper part of the device. However, the wiring becomes longer, the inductance becomes larger, or the lead frame becomes larger, and the material Yield reduction problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0058]

[0059]

[0060] figure 1 It is a key part of the circuit structure of a power semiconductor device, and it is a typical power semiconductor device with many usage examples. A power semiconductor device consists of a transistor such as an IGBT that constitutes a power switch. By controlling the on and off states of the switch, the desired power is supplied to the load and the operating state of the load is controlled. And even if the transistor switch that controls high power is cut off, the current will not be cut off instantaneously due to the presence of load or parasitic inductance components. Therefore, a diode is provided in parallel with the transistor to bypass the current when it is cut off.

[0061] That is to say figure 1Based on the circuit configuration in (a), add circuits depending on the application of single-phase or 3-phase control. figure 1 (b) is a commonly used 3-phase half-bridge inductance circuit. Power semiconductor devices sometimes...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is a power semiconductor device including: a power semiconductor element; a metal block as a first metal block that is connected to the power semiconductor element through an upper surface electrode pattern as a first upper surface electrode pattern selectively formed on an upper surface of the power semiconductor element; and a mold resin filled so as to cover the power semiconductor element and the metal block, wherein an upper surface of the metal block is exposed from a surface of the mold resin.

Description

technical field [0001] The present invention relates to a power semiconductor device widely used in vehicles, FA equipment, electric trains, and the like. Background technique [0002] A power semiconductor device is a device that incorporates a power semiconductor element and has the function of adjusting power by means of switching operations of the power semiconductor element. The device is provided with wiring that connects the housed power semiconductor element to the outside of the device. [0003] The power semiconductor element contained in the existing device is brazed and welded on the insulating substrate, and the metal wire or the metal lead wire is drawn out from the insulating substrate or the element body to form a wiring, and connected to the metal terminal (terminal) drawn outside. ). [0004] Metal terminals are embedded in the resin case of the device, and are drawn out from around the power semiconductor element to the outside of the device. Or the wiri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L23/48H01L23/42H01L23/31H01L25/07
CPCH01L2224/30181H01L2924/30107H01L24/30H01L2224/451H01L2924/01006H01L2224/73263H01L2924/3511H01L24/32H01L2224/32245H01L23/4334H01L2224/40137H01L2924/1815H01L2924/01082H01L2224/73221H01L2224/48225H01L2924/10272H01L24/06H01L2924/3025H01L23/3107H01L25/18H01L2924/01005H01L2924/01033H01L24/45H01L2924/13055H01L2924/01079H01L2924/13091H01L2924/014H01L24/48H01L24/29H01L2224/73265H01L2224/291H01L23/552H01L2924/01068H01L2224/73215H01L2224/06181H01L25/072H01L24/73H01L24/34H10W74/111H10W40/778H10W42/20H10W72/652H10W72/655H10W90/736H10W72/352H10W72/347H10W72/07336H10W72/07636H10W90/00H10W72/59H10W72/944H10W90/754H10W72/5363H10W72/865H10W72/871H10W72/886H10W72/884H10W74/10H10W74/00H10W44/501H10W90/763H10W72/552H10W72/60
OwnerMITSUBISHI ELECTRIC CORP