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Method for color purification of light emitting diode (LED) wafer

A technology for light-emitting diodes and color purification, which is applied to electrical components, electrical solid-state devices, circuits, etc., and can solve problems such as poor chip insertion and trouble.

Active Publication Date: 2014-04-09
陈文彬
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it is a big problem for semiconductor manufacturers of LED chips whether to pack the whole batch of chips into defective products or to test the color difference of the light emitted by each chip through quality control to eliminate those that are no longer within the range

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  • Method for color purification of light emitting diode (LED) wafer
  • Method for color purification of light emitting diode (LED) wafer
  • Method for color purification of light emitting diode (LED) wafer

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Embodiment Construction

[0026] It is known that the chip has a problem of color deviation after the light-emitting diode process, and the center wavelength of the light emitted from the core of the chip to the surrounding may be different. When the color deviation exceeds the tolerance limit, the chip is regarded as a defective product and discarded . In addition, when performing quality control, the center wavelength of each wafer must be measured as a basis for elimination.

[0027] The invention provides a wafer-level light-emitting diode multilayer light filter film and its color purification method to solve the above problems. When the central wavelength of the entire wafer is adjusted to a consistent target wavelength, the semiconductor manufacturers of LED grains only need to eliminate those with poor brightness (there is only one central wavelength of the entire wafer) without worrying about chromatic aberration and quality control. will become very easy. For downstream operators, it is mor...

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Abstract

A method of wafer level purifying light color of a LED semiconsuctor is disclosed. After a LED wafer is fabricated, multi-transparent films formed of first layer and a second layer alternatively until reaching a predetermined number deposited by e-gun deposition with an aid of ion plasma beam. The first layer is formed of an oxide layer and the second layer is formed of a metal oxide layer. The two materials, one has a high index of refraction and the other has a low index of refraction. The total multi-transparent films are about 80 to 120 layer which can narrow wave width about a central wavelength.

Description

technical field [0001] The invention relates to a light emitting diode wafer, in particular to a light emitting diode structure in which a multi-layer filter film is formed on the light emitting diode wafer (wafer) after the wafer process is completed, so as to purify the light emitting color of the wafer. Background technique [0002] The principle of light emitting diodes (Light emitting diodes; LED) is to emit light when current flows forward into the p-n of the semiconductor. Among them, AlGaInP materials are used in high-brightness red, orange, yellow and yellow-green LEDs, and AlGaInN materials are used in blue and green LEDs, and are often mass-produced by metal organic vapor phase epitaxy (MOVPE). Using homo-junction (HOMO), single-heterostructure (SH), double-heterostructure (DH), single-quantum well (SQW) and multiple Quantum well structure (multiple-quantum well, MQW) ... and other structures or other structures emit light. [0003] The structure of traditional ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/44
CPCH01L33/46H01L2933/0025H01L27/156H01L33/44
Inventor 陈文彬
Owner 陈文彬