Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for erasing and writing data of FLASH memory

A FLASH memory and data technology, applied in the field of data storage, can solve the problems of reducing the service life of FLASH, the limited number of erasing times of FLASH, and frequent erasing of sectors, etc., and achieve the effects of prolonging the service life, reducing the number of times of erasing, and improving efficiency

Inactive Publication Date: 2012-01-04
SHENZHEN GONGJIN ELECTRONICS CO LTD
View PDF5 Cites 29 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This traditional method has the following disadvantages: every time a byte in a sector is changed, the data of the entire sector must be erased, and some data needs to be modified frequently, and the sector where the data is located will be frequently erased
It can be seen that the traditional FLASH writing method needs to erase data frequently, but the number of erasing of FLASH is limited, and using the traditional method to write and modify data will greatly reduce the service life of FLASH

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for erasing and writing data of FLASH memory
  • Method for erasing and writing data of FLASH memory
  • Method for erasing and writing data of FLASH memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0016] see figure 1 As shown, the data erasing and writing method of the FLASH memory in this embodiment includes the following steps.

[0017] 101. When it is necessary to write information in the update sector, it is judged whether a record for storing data last time exists, and if it exists, perform step 102; if not, perform step 103.

[0018] 102. Since it is the first time to write data, according to the normal process, erase the entire sector, and write data from the starting position of the sector, record the start address and end address of the data written this time, and The valid data a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for erasing and writing data of a FLASH memory, comprising the following steps of: when data are required to be written into a sector, firstly judging whether a free space of the sector is sufficient to store the data to be written, and if the free space of the sector is sufficient, writing the data into the lowest address of the free space of the sector directly; if the free space of the sector is insufficient, erasing the sector and then writing the data into the lowest address of the sector; and recording the start and end address information of the written data after the data are completely written, and updating effective data address information to be taken as a word address of the written data. In the method, the data are written into the sector in sequence, the word address of the data which are written at last is taken as an effective data word address, and the whole sector is erased and the data are written into the sector from the initial position of the sector when the free space of the sector is insufficient, thus erasing frequency of the sector is obviously reduced, efficiency is improved, and service life of the FLASH memory is prolonged.

Description

technical field [0001] The invention relates to the technical field of data storage, in particular to a method for erasing and writing data of a FLASH memory. Background technique [0002] FLASH memory is a semiconductor memory with significant advantages such as high integration, fast reading speed, single power supply, and many times of reprogramming. As a non-volatile data storage device, FLASH memory is widely used in embedded systems. The FLASH in the single-chip microcomputer can be programmed online, and can also store the data when the program is running, but when modifying the data in the FLASH, it needs to be erased first, that is, to modify a byte of data, it is necessary to erase all the sector where the byte is located. data, and then write the data. The traditional data writing method adopts the following process: 1. First read the data of the entire sector into the cache; 2. Modify the data in the cache; 3. Erase the sector, and write the modified data in t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02
Inventor 闫瑞轩王志波汪澜
Owner SHENZHEN GONGJIN ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com