Nonvolatile memory and operation method thereof

Abstract

The invention relates to a nonvolatile memory and an operation method thereof. The operation method of the nonvolatile memory is applicable to a multilevel memory cell with a first storage position and a second storage position and comprises the following steps of: setting a main voltage distribution group and a plurality of sub voltage distribution groups, wherein the main voltage distribution group and the sub voltage distribution groups respectively comprise N critical voltage distribution curves, and N is an integer greater than 2; selecting a first operation level and a second operation level according to programming instructions; programming the first storage position according to the critical voltage distribution curves corresponding to the first operation level in the main voltage distribution group; and selecting one voltage from the sub voltage distribution groups according to the first operation level and programming the second storage position according to the critical voltage distribution curves corresponding to the second operation level in the selected sub voltage distribution groups.

Description

technical field [0001] The invention relates to a non-volatile memory and its operating method, in particular to a non-volatile memory with multi-level memory cells with multiple storage locations and its operating method. Background technique [0002] A charge trapping memory is a memory with a nitride structure that uses silicon nitride instead of a polysilicon floating gate as a charge trapping layer. Among them, the memory cell of the nitride structure can use the localized charge trapping technology, so that there can be two separated charge bits in a single NBit memory cell, and then form the so-called single memory cell double bit (2 bits / cell) storage type. In addition, by setting the two bits in the NBit memory cell to multiple programming levels, the NBit memory cell can also be used as a multi-level memory cell (Multi-Level Cell, MLC). [0003] In the operation of NBit memory cells, two bits located in the same memory cell will affect each other and cause misju...

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Problems solved by technology

[0008] Another object of the present invention is to overcome the defects of the existing non-volatile memory and provide a new non-volatile memory. The technical problem to be solved is to prevent the memory from responding to the second bit The problem of reading errors caused by the effect, so it is more suitable for practical

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