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Solid-state imaging apparatus and imaging system

A technology of solid-state imaging and equipment, which is applied to the components of TV systems, image communication, and electrical solid-state devices to achieve the effect of reducing actual capacitance

Active Publication Date: 2014-04-02
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

That is, in the invention of the related art, the output signal of the buffer amplifier is not applied to the aluminum wiring arranged between the conductor and the charge-voltage converter in order to suppress the electric charge caused by the conductor maintained at a fixed potential- The increase in capacitance of the voltage converter

Method used

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  • Solid-state imaging apparatus and imaging system

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Embodiment Construction

[0023] will refer to Figure 1A and Figure 1B A schematic arrangement of the solid-state imaging device 100 according to an embodiment of the present invention is described. The solid-state imaging device 100 can be formed by, for example, arranging a plurality of imaging blocks 101 . In this case, an array of a plurality of imaging blocks 101 may form a sensor panel SP having one imaging area. A plurality of imaging blocks 101 may be arranged on a support substrate 102 . When the solid-state imaging device 100 uses a single imaging block 101, the single imaging block 101 forms the sensor panel SP. Each of the plurality of imaging blocks 101 can be provided by, for example, forming a circuit element on a semiconductor substrate or forming a semiconductor layer on, for example, a glass substrate and forming a circuit element on the semiconductor layer. Each of the plurality of imaging blocks 101 has a pixel array in which a plurality of pixels are arranged so as to form a p...

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Abstract

A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are arranged, wherein the pixel array has a region formed from one of an electrical conductor and a semiconductor to which a fixed electric potential is supplied, each pixel includes a photoelectric converter, a charge-voltage converter which converts charges generated by the photoelectric converter into a voltage, and an amplification unit which amplifies a signal generated by the charge-voltage converter by a positive gain and outputs the amplified signal to an output line, and the output line comprising a shielding portion arranged to shield at least part of the charge-voltage converter with respect to the region.

Description

technical field [0001] The present invention relates to solid-state imaging devices and imaging systems. Background technique [0002] In a solid-state imaging device, charges generated by photoelectric converters are converted into voltages by charge-voltage converters such as floating diffusion. Let Q be the charge, V the voltage, and C the capacitance of the charge-to-voltage converter. Since V=Q / C, the sensitivity can be improved by reducing the capacitance of the charge-to-voltage converter. [0003] Japanese Patent Laid-Open No. 7-58308 discloses a solid-state imaging device including a light receiving unit 1 , a memory unit 2 , a horizontal transfer unit 3 , a floating diffusion 23 , an output amplifier 27 and a buffer amplifier 31 . The light receiving unit 1 includes a plurality of shift registers continuous in the vertical direction. The storage unit 2 includes a plurality of shift registers following those of the light receiving unit 1, and stores information c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/335H04N5/3745H04N5/378H01L27/146H04N25/00
CPCH04N5/3745H01L27/14663H04N5/32H04N5/3415H01L27/14623H01L27/14609H01L27/14643H04N25/41H04N25/77H04N25/78H04N23/30H04N25/616H04N25/771H04N25/75H01L27/14636
Inventor 松田崇菊池伸小泉徹
Owner CANON KK