Device integrated with Schottky diode in power transistor and forming method thereof

Abstract

The invention provides a device integrated with a Schottky diode in a power transistor and a forming method thereof. The method comprises the following steps of: providing a semiconductor substrate, wherein the semiconductor substrate comprises a Schottky region and a transistor region, and a first n type epitaxial layer is formed on the surface of the semiconductor substrate; forming a Schottky groove positioned in the Schottky region within the first n type epitaxial layer; forming a first oxidation layer on the surface of the Schottky groove; forming a transistor groove positioned in the transistor region within the first n type epitaxial layer; forming a second oxidation layer on the surface of the transistor groove and the surface of the first oxidation layer; forming a polysilicon layer full of the Schottky region and the transistor region on the surface of the second oxidation layer; and forming a power transistor in the transistor region. According to the embodiment of the invention, source-drain breakdown voltage of the power transistor in the device integrated with the Schottky diode in the power transistor can be increased and the source-drain breakdown characteristic can be improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a device integrating a Schottky diode in a power transistor and a forming method thereof. Background technique [0002] With the continuous development of semiconductor technology, a power device (Power Device), as a new type of device, is widely used in fields such as disk drives and automotive electronics. Power devices need to be able to withstand large voltage, current and power loads. However, existing devices such as MOS transistors cannot meet the above requirements. Therefore, in order to meet the needs of applications, various power devices have become the focus of attention. [0003] In order to improve the cross-frequency characteristics of power devices, a common method at present is to connect a Schottky diode in parallel on the chip of the power transistor, that is, integrate a Schottky diode in the power transistor. A device integrated with a Schottky diode in a pow...

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Problems solved by technology

[0009] The problem to be solved by the present invention is to provide a method for forming a device integrating a Schottky diode in a power transistor, so as to solve the problem that the source-drain breakdown voltage of the existing power transistor is relatively small

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