Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for judging etching ending point through pressure variation

A technology of etching termination and pressure, applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve the problem of high cost and achieve the effect of low cost and high reliability

Inactive Publication Date: 2012-02-01
PIOTECH CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to provide a method for judging the etching stop point through pressure changes, and solve the problems of high cost in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for judging etching ending point through pressure variation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Such as figure 1 As shown, in the process of etching and cleaning the cavity of the PECVD equipment, the opening of the valve 3 on the exhaust pipe 2 remains unchanged, and the method of judging the completion of the etching and cleaning is determined by monitoring the change of the pressure in the cavity 1 .

[0025] In the etching process, the process parameters are as follows:

[0026] Oxygen flow: 1600sccm;

[0027] C 2 f 6 Flow: 1600sccm;

[0028] Valve opening: 17%;

[0029] During the etching process, when the pressure in the cavity changes from 3 torr to 2.5 torr, the etching cleaning is completed.

[0030] In this embodiment, a pressure gauge is used to monitor the change of the pressure in the cavity 1 .

[0031] After adopting this embodiment to judge that the etching is terminated, the test data are as follows:

[0032] Table 1

[0033] intracavity pressure

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of plasma-enhanced chemical vapor deposition (PECVD) equipment etching, in particular to a method for judging an etching ending point through pressure variation. The method is used for judging washing finish when a cavity of PECVD equipment is washed through etching. The method is characterized in that the cavity, the etching ending point of which needs to be judged, is communicated with an exhaust duct; the exhaust duct is provided with a valve; and the etching ending point is judged by monitoring pressure variation in the cavity. The method has the following beneficial effects: the method is simple and convenient and has high reliability; and the problems such as higher cost in the prior art are solved by adopting the method.

Description

technical field [0001] The invention relates to the field of etching of PECVD equipment, in particular to a method for judging the end point of etching through pressure changes, which is a method for judging the completion of cleaning when PECVD equipment performs cavity etching and cleaning. Background technique [0002] Etching technique is a technique for selectively etching or stripping the surface of the semiconductor substrate or the surface covering film according to the mask pattern or design requirements in the semiconductor process. [0003] Etching and cleaning of PECVD equipment refers to: after the PECVD equipment deposits thin film process, there will be thin film deposited on the inner wall of the cavity and the surface of parts inside the cavity. When the thin film accumulates too much, it will fall off on the wafer, seriously affecting Thin film process. Therefore, they need to be cleaned by etching before the film falls off. [0004] Etching and cleaning ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/52H01L21/66H01J37/32
Inventor 林英浩
Owner PIOTECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com