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Light-emitting component

A light-emitting element and light-emitting layer technology, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of reduced efficiency of light-emitting diodes, insufficient contact area, and high rise

Active Publication Date: 2014-01-22
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conversely, if the contact area between the extension electrode and the semiconductor layer is not enough, the forward voltage (forward voltage, V f ) will increase, which will reduce the efficiency of the light-emitting diode

Method used

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Embodiment Construction

[0031] see Figure 1A , the first embodiment of the present invention discloses a light emitting element 100, comprising: a substrate 102; a first semiconductor layer 104 formed on the substrate 102, and a metal electrode 112 is formed on the exposed surface of the first semiconductor layer 104; a light emitting Layer 106 is formed on the first semiconductor layer 104; a second semiconductor layer 108 is formed on the light emitting layer 106, and a recess 101 is formed on the surface of the second semiconductor layer 108; and a metal electrode 105 is formed on the second semiconductor layer 108 , including a main electrode 110 and at least a first extension electrode 109 extending from the main electrode 110, wherein the first extension electrode 109 is formed along the surface of the recess 101, increasing the contact between the first extension electrode 109 and the second semiconductor layer 108 area.

[0032] The material of the light-emitting stack composed of the first ...

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Abstract

The invention discloses a light-emitting component. The light-emitting component comprises a base plate, a first semiconductor layer, a light-emitting layer, a second semiconductor layer and a metal electrode, wherein at least one concave part is formed on the surface of the second semiconductor layer; the metal electrode is formed on the second semiconductor layer and is provided with at least one first extending electrode; and the first extending electrodes are formed along with the surface of the concave part.

Description

technical field [0001] The invention relates to a light-emitting element, in particular to a light-emitting element with an electrode structure that can improve electrical performance. Background technique [0002] At present, light-emitting diodes generally have the problem of poor current diffusion. For light-emitting diodes with a p-type semiconductor layer on top, a p-type semiconductor layer is formed on the light-emitting layer, and an electrode pad can be provided on the p-type semiconductor layer to guide current. At present, the way to improve current diffusion is to form a current diffusion layer made of metal oxide or gallium phosphide on the p-type semiconductor layer, and then arrange electrode pads on the current diffusion layer, and further the electrode pads can One or more extension electrodes are extended to further enhance current distribution. [0003] However, disposing the extension electrodes will have a bad influence on the light output of the LED. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/38
Inventor 张利铭沈建赋柯淙凯
Owner EPISTAR CORP