Device and method used for preparing transparent conducting film of thin film solar cell
A transparent conductive film, solar cell technology, applied in circuits, discharge tubes, electrical components, etc., can solve the problems of long deposition time, long manufacturing time, complex equipment, etc., and achieve simple structure, uniform coating, high conductivity of equipment Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0029] In this embodiment, the AZO film layer is sputtered and plated on the back electrode of the substrate 101. The coating manufacturing equipment includes a vacuum chamber 104, a sputtering target 105, an anode device 107 and a substrate holder 106, and the substrate 101 is placed on the substrate holder 106. Above, the anode device 107 includes an anode rod 107-1, a plugging wire 107-2, and an air diffuser 107-3. The anode rod 107-1 is a stainless steel round tube with small holes with internal threads on the side, and the air diffuser 107- 3 includes a head 107-3-1 and a shank 107-3-2, the shank 107-3-1 has an external thread, and the hole distribution of the head 107-3-1 is as follows Figure 5 As shown, the handle 107-3-2 cooperates with the internal thread of the small hole on the side of the anode rod 107-1 and is installed on the anode rod 107-1, and the plugging wire 107-2 is tightened on the top of the anode rod 107-1, and the anode rod 107 -1 is fixed on the vacu...
Embodiment 2
[0039]The difference between this embodiment and Embodiment 1 is that the small hole on the side of the anode rod 107-1 of this embodiment is a light hole, the outer surface of the handle 107-3-2 of the airflow diffuser 107-3 is a smooth surface, and the handle 107-3-2 is a smooth surface. 3-2 is closely matched with the light hole, and the hole distribution of the head 107-3-1 of the air diffuser 107-3 is as follows Figure 7 As shown, the vacuum chamber 104 is grounded, the sputtering target 105 is aluminum-doped zinc oxide, the potential U1 is -300V, the substrate 101 is placed on the substrate holder 106, the potential U2 is -15V, and the potential U3 of the anode device 107 is - 5V. Others are the same as in Embodiment 1. According to this manufacturing process, the final film resistivity is 4.2×10 -4 Ω.cm.
Embodiment 3
[0041] In this embodiment, the vacuum chamber 104 is grounded, the sputtering target 105 is aluminum-doped zinc oxide, the potential U1 is -100V, the substrate 101 is placed on the substrate holder 106, the potential U2 is -5V, and the potential U3 of the anode device 107 is 5V . Others are the same as in Embodiment 1. According to this manufacturing process, the final film resistivity can reach 3.32×10 -4 Ω.cm.
PUM
| Property | Measurement | Unit |
|---|---|---|
| electrical resistivity | aaaaa | aaaaa |
| electrical resistivity | aaaaa | aaaaa |
| electrical resistivity | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 