Chemical mechanical polishing solution

Abstract

The invention relates to a chemical mechanical polishing solution. The chemical mechanical polishing solution simultaneously contains grinding granules, halogen-containing oxidant, organic amine, ethylene diamine tetraacetic acid (EDTA) and pH regulator; and the chemical mechanical polishing solution has alkali pH value. The polishing solution has very high polishing rate for silicon and copper under the alkali polishing environment. Amino acid can be continuously added into the polishing solution, so that the removal rate of the silicon and the copper is kept stable.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid. Background technique [0002] TSV technology (Through-Silicon-Via) is the latest technology to realize the interconnection between chips by making vertical conduction between chips and between wafers. Different from the previous IC package bonding and overlay technology using bumps, the advantage of TSV is that it can maximize the density of chips stacked in three dimensions, minimize the overall size, shorten the interconnection, and improve the performance of chip speed and low power consumption. [0003] When the crystal back thinning technology (backside thinning) in TSV technology requires polishing, it has a very high polishing speed for both silicon and copper materials. [0004] The polishing of silicon is usually carried out under alkaline conditions, which can obtain a higher polishing speed. For example: [0005] US2002032987 discloses a polishing solution using alkanolamine...

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Problems solved by technology

However, if an oxidizing agent is added, such as hydrogen peroxide, the hydrogen peroxide will oxidize the surface of the elemental silicon into silicon dioxide, whic

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