VPNP device structure used in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process and manufacturing method thereof

Abstract

The invention discloses a VPNP device structure used in a BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process. In the VPNP device structure, a P-type embedded layer and a deep N trap are formed on the top of a P-type substrate; a N-type embedded layer, a P-type embedded layer and a collector region are formed on the top of the deep N trap; the P-type embedded layer and the collector region on the top of the deep N trap are adjacent to each other; a base region is formed above the collector region; an emitting region is formed on the top of the base region; a shallow trench isolator is formed above the P-type substrate and the deep N trap, and is adjacent to the collector region and the base region; an isolation medium is formed above the base region and the shallow trench isolator; a polycrystalline silicon layer is formed above the base region; a part of polycrystalline silicon is positioned above the isolation medium; metal connecting lines are led out of the P-type embedded layer and the N-type embedded layer through deep contact holes; a metal connecting line is led out of the polycrystalline silicon layer through a contact hole; and a metal connecting line is ledout of the emitting region through a contact hole. The invention further discloses a manufacturing method of the VPNP device structure. Due to the adoption of the VPNP device structure and the manufacturing method disclosed by the invention, the resistance of the collector region can be lowered, the radio-frequency performance of the device is improved, and the amplifying coefficient and substrate current of a VPNP tube are lowered.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a VPNP device structure in a BiCMOS process. The invention also relates to a method for manufacturing the VPNP device structure in the BiCMOS process. Background technique [0002] In RF applications, higher and higher device characteristic frequencies are required. Although RFCMOS (RF Complementary Metal Oxide Semiconductor Field-Effect Transistor) can achieve higher frequencies in advanced process technologies, it is still difficult to fully meet the RF requirements, such as very It is difficult to achieve a characteristic frequency above 40GHz, and the research and development cost of advanced technology is also very high; compound semiconductors can realize very high characteristic frequency devices, but due to the disadvantages of high material cost and small size, and most compound semiconductors are toxic, it limits its application. SiGe HBT is a good choice fo...

AI Technical Summary

Problems solved by technology

The device technology is mature and reliable, but the main disadvantages are: 1. High epitaxy cost in the collector area; 2. Limited radio frequency capability and high substrate current; 3. The deep trench isolation process is complicated and the cost is high

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