Porous silicon preparing device for gross-area device transfer

Abstract

The invention discloses a porous silicon preparing device for gross-area thin-film device transfer, which comprises a trough body and is characterized in that an etching trough is formed above the trough body; a vacuum chamber is formed below the trough body; a through hole is formed between the etching trough and the vacuum chamber; a rubber pad is arranged on the bottom surface of the etching trough; the through hole is positioned in a ring of the rubber pad; a negative gauze platinum electrode is also arranged in the etching trough; a metal probe electrode is arranged in the vacuum chamber; the upper end of the metal probe electrode passes through the through hole and is positioned in the etching trough; and a vacuum exhaust port is arranged in the vacuum chamber. The device disclosed by the invention has the advantages that: the structure is simple, and the operation is convenient; the device can realize gross-area erosion on the front side of a monocrystalline silicon piece, thereby realizing the purpose of integrally transferring an epitaxial device; and the device can etch monocrystalline silicon pieces with multiple sizes, and the etched monocrystalline silicon pieces can be recycled after being processed.

Description

technical field [0001] The invention relates to a device for preparing porous silicon for full-area device transfer, which can realize borderless transfer of epitaxial devices by preparing double-layer porous silicon or porous silicon with gradually increasing porosity. It belongs to a device for preparing porous silicon. Background technique [0002] Since single crystal silicon wafers have an excellent inductive effect on thin films deposited thereon, epitaxial thin films on single crystal silicon have been widely used in the preparation of semiconductor thin film devices. However, in the process of preparing semiconductor thin film devices by this method, the single crystal silicon wafer can only be used once, and the manufacturing cost of the single crystal silicon wafer itself is relatively high, which leads to the high cost of the semiconductor thin film device. Layer transfer technology is a technology that not only maintains the complete lattice structure of the...

AI Technical Summary

Problems solved by technology

In the two methods, the silicon wafer is fixed by a certain fixture or a mechanical device similar to a fixture. Due to the blocking of the fixture, the entire front side of the silicon wafer cannot be guaranteed to be corroded during the etching process. In the subsequent device transfer process, it can only be realized. partial transfer

On the one hand, this phenomenon leads to incomplete utilization of single crystal silicon wafers, resulting in waste of materials; on the other hand, since the edge of the porous silicon region is connected to the single crystal silicon with a complete crystal lattice, a large external force will be required during the device transfer process. The device can be peeled off, so that the porous silicon film may crack along the cleavage plane under the action of external force, damaging the integrity of the epitaxial device on it

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