Groove etching method and semiconductor device manufacturing method

Abstract

The invention provides a groove etching method and a semiconductor device manufacturing method. The groove etching method provided by the invention comprises the following steps: pad oxide layer formation: forming a pad oxide layer on a substrate; hard mask formation: forming a hard mask on the pad oxide layer; photoresist layer formation: forming a photoresist layer on the hard mask; photoetching: photoetching the photoresist layer to obtain a pattern on the photoresist layer; hard mask etching: etching the hard mask by using the pattern on the photoresist layer obtained in the photoetching step to form a hard mask pattern; photoresist layer removal: removing the photoresist layer with oxygen; and groove etching: etching the groove with oxygen by using the hard mask pattern etched in the hard mask etching step, wherein the key dimensions of the groove etched in the groove etching step are controlled by controlling the oxygen flow rate in the groove etching step.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, more specifically, the invention relates to a trench etching method and a semiconductor device manufacturing method using the trench etching method. Background technique [0002] In the manufacturing process of various semiconductor devices, trench etching, such as shallow trench etching, is generally required. [0003] Generally, in the existing trench etching method, the photoresist is first photoetched, then the photoresist pattern after photoetching is used to etch the hard mask, and finally the etched hard mask is used to etch the hard mask. film pattern to etch trenches. Thus, lithography of the photoresist will then define a lithography CD, and after the hardmask etch a hardmask etch CD will be defined, the two CDs (i.e., the lithography CD and Hardmask Etch CD) essentially defines the final trench CD of the trench. [0004] However, with the development of device desig...

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Problems solved by technology

[0004] However, with the development of device design and manufacturing technology, and the improvement of electronic design requirements for device dimensional accuracy, it is often desired to be able to precisely control the critical dimensions of the trench opening, and the above-mentioned prior art trench etching method can only The critical dimension of the trench opening is roughly defined, but the critical dimension of the trench opening cannot be precisely controlled or dynamically adjusted

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