Hole measurement pattern and hole measurement method

Abstract

The invention provides a hole measurement pattern and a hole measurement method. The hole measurement pattern comprises a first part, a second part and a third part, wherein the first part is a repeated pattern area at least comprising three rows and three columns of repeated patterns; the second part is a pattern formed after a T-shaped pattern turns 90 degrees; the third part is a T-shaped pattern; the second part is arranged at the side of the first part; and the third part is arranged at the upper part or lower part of the first part. The pattern and the method have the following beneficial effects: the measurement of the critical dimension of the contact hole and / or through hole layer dense area is improved, and auxiliary measurement patterns are arranged in the contact hole and through hole layer dense pattern areas, thus improving the measurement condition of the critical dimension of the area.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, more specifically, the invention relates to a hole measurement pattern and a hole measurement method using the hole measurement pattern for hole measurement. Background technique [0002] In semiconductor chip manufacturing, after a layer of circuit is defined by lithography, it is necessary to measure some graphic dimensions to monitor whether the lithography process is up to standard. Therefore, various measurement patterns are generally used to measure various circuit patterns, such as lines, grooves, holes, and the like. [0003] With the continuous development of integrated circuit technology, the critical dimensions are getting smaller and smaller, which brings extremely high requirements to the automatic measurement of the critical dimensions of integrated circuits. [0004] For key layers such as contact holes and through holes, since the measured figure itself is a hole (hole)...

AI Technical Summary

Problems solved by technology

It is even more difficult to measure holes in a large area of ​​repeated dense areas; and, for key layers such as contact holes and through holes, we often need to measure the critical dimensions of multiple locations; therefore, if a large area of ​​dense area If the hole is the first measurement point and the position of the first measurement point is not found correctly, it will bring deviation to the measurement of the subsequent measurement points, resulting in the failure of automatic measurement

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