Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for controlling pollution in manufacturing of semiconductor wafer

A pollution control and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of complex pollution control and no level difference, and achieve the effect of preventing pollution and easily controlling cross-contamination

Active Publication Date: 2013-08-07
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as production devices have higher and higher requirements for pollution control, the division of pollution levels is becoming more and more detailed. The increase of pollution will make the pollution control more and more complicated. At the same time, there may be some pollution signs that are mutually exclusive, but there is no strict level difference.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for controlling pollution in manufacturing of semiconductor wafer
  • Method for controlling pollution in manufacturing of semiconductor wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0016] figure 2 It is a schematic flow chart of the pollution control method in semiconductor wafer manufacturing of the present invention. Such as figure 2 Shown, the pollution control method in a kind of semiconductor wafer manufacture of the present invention:

[0017] First, according to the pollution control requirements on the actual production line, classify and set the pollution marks; set F0 to indicate the standard front end, PR to indicate the front end with glue, BE to indicate the back end of the AL process, BEPR to indicate the back end of the AL process with glue, and CU to indicate the copper process , CUPR means copper process with glue, NI means NI process, NIPR means NI process with glue, etc.

[0018] Secondly, according to each machine and its capacity, set at least one pollution mark that allows entry on the machine; set...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of semiconductor manufacturing, in particular to a method for controlling pollution in manufacturing of a semiconductor wafer. In the method for controlling pollution in manufacturing of the semiconductor wafer, a pollution sign is arranged on a silicon batch, the pollution sign allowing passing through is set on a machine, a mode by determining whether the pollution sign carried by the silicon batch is the pollution sign allowed to pass through by the machine is utilized for control, the pollution sign does not need to be scheduled for grades, and maintenance force can not be continually increased due to increase of pollution grades, therefore, easy control of cross pollution of a production line is realized, and pollution of low pollution grade siliconbatch per se due to entering the high pollution grade machine can be effectively prevented.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits and its manufacture, in particular to a pollution control method in semiconductor wafer manufacturing. Background technique [0002] In the manufacturing process of integrated circuits, once a silicon wafer with a pollution index enters a key process equipment, it will seriously affect the equipment atmosphere of this key process, especially in the non-stop follow-up operation, this atmosphere will seriously affect the subsequent large-scale production. Batches of silicon wafers, that is, in the specific manufacturing process, some harmful elements introduced into the device will directly lead to the deterioration of the reliability of the device, or even cause it to fail to work. What's more, after the equipment of the key process is polluted by this It will cause the equipment to be unusable, which will have a fatal impact on the operation of the factory; so how to prevent the ab...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67
Inventor 张海芳娄晓琪
Owner SHANGHAI HUALI MICROELECTRONICS CORP