The preparation method of graphene
A graphene and graphite technology, applied in the field of organic semiconductor materials, can solve the problems of long reaction time and low yield, and achieve the effects of few production steps, simple equipment and high purity
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Embodiment 1
[0028] A kind of preparation method of high-purity graphene, its technological process is as follows:
[0029] (1) Provide expandable graphite with an expansion degree of 300ml / g;
[0030] (2) The expandable graphite is fed into an inert mixed gas (5%H 2 and 95% Ar), the temperature is rapidly raised to 1000°C, and after heating for 30s, the worm-like graphite is obtained by thermal exfoliation;
[0031] (3) adding the worm-like graphite in (2) into the NMP (N-methylpyrrolidone) solution to prepare a worm-like graphite suspension with a concentration of 0.1g / L;
[0032] (4) At first this worm-like graphite suspension is ultrasonically dispersed for 10min to obtain a uniformly dispersed solution, then centrifuged at a centrifugal speed of 900rpm for 60min, then washed three times with ethanol, washed three times with deionized water to make the solution neutral, and finally Dry at 100°C for 30 hours in a vacuum environment to obtain a high-purity single-layer or few-layer gra...
Embodiment 2
[0034] A kind of preparation method of high-purity graphene, its technological process is as follows:
[0035] (1) Provide expandable graphite with an expansion degree of 300ml / g;
[0036] (2) After the expandable graphite is heated for 15min by a microwave reactor with a power of 1500W, it is thermally peeled off to obtain worm-like graphite;
[0037] (3) the worm-like graphite in (2) is added in the DMF solution, is mixed with the worm-like graphite suspension that concentration is 100g / L;
[0038] (4) At first this worm-like graphite suspension is ultrasonically dispersed for 60min to obtain a uniformly dispersed solution, then centrifuged at a centrifugal speed of 900rpm for 10min, then washed three times with ethanol, and washed three times with deionized water to make the solution neutral, and finally Dry at 200°C for 20 hours in a vacuum environment to obtain a high-purity single-layer or few-layer graphene material.
[0039] see figure 2 , shown is the scanning ele...
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