Method of manufacturing semiconductor devices

Abstract

A method of manufacturing semiconductor devices includes forming a plurality of lines arranged in a direction over a semiconductor substrate, forming mask patterns over the semiconductor substrate wherein the mask patterns intersect the lines, and forming junctions in the semiconductor substrate between the lines by performing an ion implantation process.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2010-0114395 filed on November 17, 2010, the entire contents of which are incorporated herein by reference. technical field [0003] Exemplary embodiments of the present invention generally relate to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device capable of reducing / minimizing the occurrence of a gate line bow phenomenon. Background technique [0004] A semiconductor device includes a cell region and a peripheral region. The cell area includes a plurality of memory cells for storing data, and the peripheral area includes different functional modules for programming, reading, and otherwise controlling the memory cells. Here, the peripheral region may include not only low-voltage transistors but also high-voltage transistors for supplying a high voltage. In the case of an ...

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Problems solved by technology

[0013] refer to figure 2 , the grid-line bending phenomenon may cause defects in 40

For example, if a gate line abuts on an adjacent but separated gate line, the power supplied to the gate line may also be supplied to the adjacent gate line, and thus the reliability of the semiconductor device may deteriorate

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