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Image sensor

A technology of image sensor and sensing unit, which is applied in the field of sensors, can solve the problems of incorrect color and the inability of the sensing unit to absorb carriers, etc., and achieve the effect of improving the phenomenon of crosstalk

Inactive Publication Date: 2014-08-20
NOVATEK MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the sensing units of various colors cannot absorb the carriers generated only by the corresponding color light, so that the color corresponding to the sensing result is incorrect

Method used

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Embodiment Construction

[0039] figure 1 It is a cross-sectional view of an image sensor according to an embodiment of the present invention, wherein the sensing units for sensing three different colors of light are drawn on the same cross-section for convenience of illustration, which does not represent the actual application situation. Please refer to figure 1 The image sensor 100 of this embodiment includes a substrate 110 , a deep well layer 120 , a plurality of first sensing units 130 , a plurality of second sensing units 140 and a plurality of third sensing units 150 . The deep well layer 120 is located in the substrate 110 . The first sensing unit 130 , the second sensing unit 140 and the third sensing unit 150 are located between a first surface 112 of the substrate 110 and the deep well layer 120 . Therefore, the movement of carriers generated by light irradiating the sensing units 130 , 140 and 150 is limited by the deep well layer 120 .

[0040] The ratio of the area of ​​the part of the...

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Abstract

The invention discloses an image sensor. The image sensor includes a substrate, a deep well layer, a plurality of first sensing units, a plurality of second sensing units and a plurality of third sensing units. Deep well layers are located within the substrate. The first sensing unit, the second sensing unit and the third sensing unit are located between a first surface of the substrate and the deep well layer. The ratio of the area of ​​the portion of the deep well layer distributed under each first sensing unit to the area of ​​each first sensing unit is a first area ratio. The ratio of the area of ​​the portion of the deep well layer distributed under each second sensing unit to the area of ​​each second sensing unit is a second area ratio. The ratio of the area of ​​the portion of the deep well layer distributed under each third sensing unit to the area of ​​each third sensing unit is a third area ratio. The first area ratio is greater than the second area ratio and the third area ratio.

Description

technical field [0001] The present invention relates to a sensor, and in particular to an image sensor. Background technique [0002] An image sensor manufactured by a semiconductor manufacturing process can be used to sense light projected onto a semiconductor substrate, such as a complementary metal oxide semiconductor (CMOS). These image sensors utilize an array of sensing cells to receive light energy and convert it into digital data. However, since the silicon substrate has different absorption depths for different wavelengths of light, there will be different degrees of crosstalk among the sensing units. For example, the silicon substrate absorbs 90% of the intensity of blue light (450 nm) at an absorption depth of about 1 micron, and this depth range can completely fall within the electric field range of the sensing unit. However, the silicon substrate absorbs 90% of the light intensity of green light (550nm) and red light (650nm) at an absorption depth of about 3.7...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 黄维国姚裕源
Owner NOVATEK MICROELECTRONICS CORP