27results about How to "Improve crosstalk" patented technology

The invention relates to a backside illuminated image sensor and a manufacturing method thereof, and relates to the technical field of integrated circuits. The manufacturing method comprises the steps that a substrate is provided, the substrate comprises a first surface and a second surface which are opposite, a first isolation structure is formed in the substrate, and the first isolation structure extends from the first surface to the second surface; second isolation structures and metal grids are formed, the second isolation structures correspond to the first isolation structures and are arranged on the first surface, the second isolation structures are arranged on the first surface at intervals, and the second isolation structures and the metal grids are sequentially arranged in the direction away from the first surface; forming photodiodes between the second isolation structures, wherein the photodiodes and the second isolation structures are alternately arranged on the first surface; forming a light filtering element on one side, far away from the substrate, of the photodiode, wherein the light filtering element is located between the adjacent metal grids; according to the invention, the crosstalk problem of the backside illuminated image sensor is reduced.

The invention discloses a preparation method of a double-wave infrared detector and a double-wave infrared section detector. The preparation method comprises the following steps: providing a GaSb substrate; sequentially growing a bottom contact layer, a medium wave absorption layer, a barrier layer, a long wave absorption layer and a top contact layer on the GaSb substrate; performing primary deposition of a passivation layer on the surface of the top contact layer, and performing primary etching from the absorption layer to the top contact layer; performing secondary deposition of a passivation layer in a covering manner, and performing secondary etching from the top contact layer to the bottom contact layer; depositing a passivation layer for the third time in a covering manner; holes are formed in the passivation layer of the table top and the passivation layer of the common electrode area, UBM metal TiPtAu is evaporated at the holes, and a detector chip is manufactured; the plasma exposure time of the surface of the absorption layer is reduced to the greatest extent; the detector chip and the In column of the reading circuit are interconnected to form the detector, and the prepared detector can obtain medium-wave infrared and long-wave infrared image information by using a single detector, and has excellent detection, identification and identification capabilities.

A high-crosstalk array waveguide grating structure capable of changing waveforms and improving demodulation resolution comprises an input optical waveguide, the output end of the input optical waveguide is connected with the input end of a coupling module, and the output end of the coupling module is sequentially connected with a first slab waveguide, an array waveguide and a second slab waveguide. The output end of the second slab waveguide is respectively connected with the input ends of the first output waveguide, the second output waveguide, the third output waveguide and the fourth output waveguide; according to the invention, the array waveguide grating structure connected with the coupling module at the input end is adopted, so that the output spectrum of the adjacent output channels has large bandwidth, the large dynamic range of the adjacent channels during FBG wavelength demodulation is ensured, an optical waveguide width value different from a design value is adopted, the top end waveform of the output spectrum is regulated and controlled, and the demodulation precision is improved. On the premise of ensuring that the dynamic range of adjacent output channels is not changed, the resolution of the demodulation wavelength is improved; the device has the advantages of simple structure, large bandwidth, high crosstalk and high wavelength demodulation resolution.

The invention provides an ultra-high-speed electric connector which comprises an insulating body, the insulating body is provided with a lengthwise slot, a plurality of terminal slots are formed in lengthwise side walls on the two sides of the slot respectively, and a fool-proof part is arranged in the slot and used for dividing the insulating body into a power supply and low-speed signal area and a high-speed signal area which are located on the two sides of the fool-proof part; the plurality of terminals comprise differential signal terminals distributed in the high-speed signal area and other terminals distributed in the high-speed signal area and the power supply and low-speed signal area, every two differential signal terminals are adjacent, and two sides of every two adjacent differential signal terminals are respectively provided with a grounding terminal; every two adjacent differential signal terminals and two grounding terminals located on the two sides of the two differential signal terminals form a terminal module, and the two differential signal terminals and the two grounding terminals of each terminal module and an insulating block inserted into the insulating body are formed in an embedded mode. The ultra-high-speed electric connector can enable signal transmission to be better and more stable.

The invention provides a high-speed high-density connector with a shielding function, which comprises an insulating body, the insulating body is provided with a lengthwise slot which is concavely arranged downwards from the top surface and is used for inserting an electronic module, and a plurality of terminal slots are respectively arranged in lengthwise side walls on two sides of the slot; the plurality of terminals are respectively accommodated in the corresponding terminal grooves in the two lengthwise side walls in a one-to-one correspondence manner, at least one part of the terminal grooves are internally provided with double-layer terminals, and the other terminal grooves are internally provided with single-layer terminals; the double-layer terminal comprises a lower-layer terminal and an upper-layer terminal, the upper-layer terminal of the double-layer terminal is downwards inserted and fixed in the terminal groove from the top of the insulating body, and the lower-layer terminal of the double-layer terminal is upwards inserted and fixed in the terminal groove from the bottom of the insulating body; the single-layer terminals are inserted and fixed in the terminal grooves upwards from the bottom of the insulation body or inserted and fixed in the terminal grooves downwards from the top of the insulation body. A shielding piece is arranged between at least one part of the upper-layer terminal and the lower-layer terminal; according to the high-speed high-density connector with the shield, the signal transmission speed and the signal transmission performance can be improved.

The invention relates to the technical field of semiconductor device packaging, in particular to a DDR module packaging structure and a preparation method thereof. The DDR module packaging structure provided by the invention comprises a plurality of DDR chip sets which are arranged on the same layer; the DDR chip set comprises a plurality of DDR chips which are arranged in a stacked manner; the packaging layer is used for coating each DDR chip set; the IPD wafer is arranged on one side of the packaging layer; at least an IPD chip is arranged in the IPD wafer; the IVR chip is arranged on the other side of the packaging layer; the IVR chip is electrically connected with the IPD wafer; a part of the DDR chip is electrically connected with the IPD chip; and a part of the DDR chip is electrically connected with the IVR chip.

The invention discloses a light-emitting chip and a preparation method thereof, a display panel and a display device.The light-emitting chip comprises at least two light-emitting units, a first electrode and a second electrode, the number of the light-emitting units is at least two, and the light-emitting units are arranged in a stacked mode in the first direction; each light-emitting unit comprises a first semiconductor layer, a light-emitting functional layer and a second semiconductor layer which are sequentially stacked in the first direction; the first electrodes are arranged in one-to-one correspondence with the light-emitting units and are connected with the first semiconductor layers of the light-emitting units; the second electrode is circumferentially arranged around at least part of the light-emitting unit, and the second electrode is connected with the second semiconductor layer of the light-emitting unit; wherein the second electrodes are arranged in a stacked mode in the first direction, and the adjacent second electrodes in the first direction are connected in a bonding mode. The light-emitting chip provided by the invention can improve the aperture opening ratio so as to improve the display quality.

The utility model discloses a female end shielding assembly which comprises an outer shielding piece, an inner shielding piece, an insulator and a contact assembly, the contact assembly is installed in the insulator, the right end of the insulator is installed in the inner shielding piece, the left end of the insulator is installed in the outer shielding piece, and the left end of the inner shielding piece is inserted in an inner cavity of the right end of the outer shielding piece. The left end of the inner shielding piece is an oval cavity, and the right end of the outer shielding piece is an oval cavity matched with the left end of the inner shielding piece. The beneficial effects of the utility model are that the left end of the inner shielding member is the elliptical cavity, and the right end of the outer shielding member is also the elliptical cavity, so that the sleeving area of the inner shielding member and the outer shielding member is in elliptical sleeving, the contact area of the inner shielding member and the outer shielding member is reduced, the impedance of the shielding assembly is more excellent, and the insertion loss, crosstalk and the like are more excellent.

The utility model discloses an electric connector, which belongs to the field of electric connectors and comprises a metal shell, a first plastic main body and a first conductive terminal group, the metal shell is arranged on the periphery of the first plastic main body, part of the first plastic main body is exposed out of the metal shell, and the first conductive terminal group is arranged in the first plastic main body. According to the electric connector provided by the utility model, through the arrangement of the metal shell, the strength of the electric connector is improved, and the first plastic main body is prevented from cracking when the electric connector is subjected to external force, vibration, impact and screw locking. And the first plastic main body is exposed, so that crosstalk can be effectively improved, especially far-end crosstalk can be improved, and signal performance can be improved. Therefore, through combination of strength improvement and crosstalk improvement, the quality of the electric connector is greatly improved, and the quality and performance of electric connection are improved.

According to the display panel and the display device, a light-emitting function layer of the display panel is divided into a plurality of light-emitting units arranged at intervals, a partition structure is located between every two adjacent light-emitting units, and a sub-function layer of the light-emitting function layer is disconnected at the position corresponding to the partition structure. The partition structure is a surrounding structure which is continuously arranged in at least two directions, in the partially adjacent light emitting units, at least one light emitting unit is surrounded by one partition structure, at least one notch is formed in the position, on the outer side of the light emitting unit, of the end of the partition structure, and in every two adjacent light emitting units, at least one notch is formed in the outer side of the light emitting unit. The notch corresponding to one light-emitting unit and the notch corresponding to the other light-emitting unit are arranged in a staggered mode, so that the partition effect of the partition structure is improved.

The invention provides a method for optimizing wiring crosstalk in PCB design, and relates to the technical field of circuit diagram design. The routing crosstalk optimization method comprises the following steps of selecting signals or signal groups and layers needing to be checked, setting routing requirements, reading a PCB design drawing and obtaining the position and the angle of each routing line segment, screening out non-compliant routing line segments, determining the wiring modification space of illegal lines, and determining the routing crosstalk according to the routing modification space of the illegal lines. And automatic or manual wiring modification is carried out according to the modification space. According to the method, by optimizing the signal circuit design, the crosstalk problem generated when high-speed signals are arranged in parallel or in an overlapped mode on adjacent layers is effectively solved, so that the reliability and performance of PCB design are improved, the board card design cost and the material cost are reduced, and meanwhile the PCB design is more flexible.

The present invention discloses a terminal module and a connector, wherein the terminal module comprises a terminal, an injection molded part and a shielding sheet, wherein the terminal and the injection molded part are combined to form an injection molded body, wherein the shielding sheet is provided with a buckle structure, wherein the buckle structure comprises a buckle protrusion and a notch for matching with the injection molded body, wherein the injection molded body is provided with a buckle hole matching with the buckle protrusion and a hot rivet column adjacent to the buckle hole, wherein the hot rivet column passes through the notch to form a riveting point, and the shielding sheet and the injection molded body are fixed by hot rivet at the riveting point. The terminal module of the present invention can overcome the defects of insufficient strength, easy deformation during the crimping process and poor flatness of the terminal module after the secondary injection molding is cancelled, and can improve both the high-speed signal integrity and the mechanical properties of the terminal module.

The present application discloses an image processing method, device, storage medium and display device for a display panel, wherein the image processing method comprises the following steps: receiving target image data; performing screen detection on the target image data, and selecting first image data that meets preset conditions; performing a polarity adjustment process on a signal transmission line of the display panel when the first image data simultaneously meets a first length condition and a first width condition; exiting the polarity adjustment process when the first image data simultaneously meets a second length condition and a second width condition; wherein the preset conditions include: a screen composed of a plurality of minimum detection units in a continuous cycle. The above scheme improves the problem of display abnormality caused by common line voltage jitter due to polarity reversal.

The invention provides a method for forming a semiconductor device, which comprises the following steps of: before a grid electrode is formed, etching a semiconductor substrate, forming semiconductor island-shaped structures in array distribution, mutually connecting at least part of the semiconductor island-shaped structures through a cantilever connecting region, forming a hole control region at a first groove between the semiconductor island-shaped structures, therefore, defects generated by a subsequent epitaxial process are reduced. According to the invention, dislocation between the photodiodes can be avoided in the technological process of the cantilever connection structure, the quality of a single crystal semiconductor growing at the cantilever connection structure is good, defects are few, and the quality requirement for arranging a floating diffusion region is met. Meanwhile, the risk that thin columns remain at the bottom of the cantilever due to incomplete lateral etching is avoided, and the position where holes are formed in the epitaxial layer is controlled, so that the influence of defects on photoelectric secondary light is avoided. According to the scheme, the process steps are simple, and the high-performance image sensor with high full well electron capacity, low dark current and low crosstalk can be formed.

The invention provides a time division multiplexing readout circuit for a superconducting detector array and a readout method thereof, the circuit comprises detection pixel units, at least two row gating control lines and a column readout channel, and each row gating control line is at least connected with two detection pixel units; each detection pixel unit comprises a detector bias branch, an LC filtering isolation network, a Josephson junction switch module and a signal transmission branch which are connected in sequence; each row gating control line is connected to the control end of the Josephson junction; a common input signal line connected with the output end of each signal transmission branch is connected in series with at least two input inductors Lin, and a corresponding reading SQUID is arranged beside each input inductor Lin for magnetic coupling, so that a primary direct reading structure is formed; the read-out SQUIDs are also connected in series with one another to form a read-out SQUID column series array, and a column read-out channel is jointly formed; a time division multiplexing readout method is also provided.

The application relates to a DSFP radio frequency connector, which comprises a terminal unit and a shielding piece inserted into the terminal unit. The application reduces the crosstalk between the signals transmitted by the DSFP radio frequency connector through the following modes: the ground terminal of the terminal unit adopts a double-contact structure to contact the circuit board, the shielding piece is arranged between the terminal units and contacts the inner side of the accommodating groove of the circuit board, and the DSFP radio frequency connector is fixed to the printed circuit board through three welding legs of the shielding piece. The DSFP radio frequency connector has good high-speed transmission efficiency, can replace the common radio frequency connector in small base stations, and reduces the cost. In addition, the shielding piece of the DSFP radio frequency connector contacts the inner side of the accommodating groove of the circuit board through a double-contact structure, and the resonance problem caused by single-point contact can be avoided.

A transition device is used to transmit high-speed signals, and the transition device includes a main board, a first signal pair and a second signal pair. The main board includes a surface layer and a specific layer, and the specific layer is located in a different plane from the surface layer. The first signal pair includes a pair of first wire segments and a plurality of first end points, the plurality of first end points respectively correspond to both ends of each of the pair of first wire segments, and the pair of first wire segments and the plurality of first end points are located in the surface layer. The second signal pair includes a pair of second wire segments and a plurality of second end points, the plurality of second end points respectively correspond to both ends of each of the pair of second wire segments, the plurality of second end points are located in the surface layer, and the pair of second wire segments are located in the specific layer.

The invention discloses a data voltage control circuit and a display panel, and relates to the technical field of display, the circuit comprises a polarity duration determination module, a polarity control signal is accessed to a first end, a data voltage is accessed to a second end, and under the control of the polarity control signal, positive polarity duration data and negative polarity duration data of the data voltage are determined; the first end of the polarity duration comparison module is connected with the third end of the polarity duration determination module, and positive polarity adjustment data and negative polarity adjustment data are respectively determined based on the positive polarity duration data and the negative polarity duration data; the first end of the data voltage adjusting module is connected with the second end of the polarity time length comparison module, the second end of the data voltage adjusting module is connected with data voltage, and the data voltage adjusting module is used for adjusting the positive polarity hopping time length based on the positive polarity adjusting data and adjusting the negative polarity hopping time length based on the negative polarity adjusting data so that the positive polarity hopping time length can be equal to the negative polarity hopping time length. According to the invention, the screen crosstalk is improved by optimizing the design of the data voltage control circuit.

The utility model discloses an electric connector. The electric connector comprises an insulating body; the plurality of grounding terminals and the plurality of signal terminals are arranged side by side left and right and are respectively and correspondingly accommodated in the insulating body, each grounding terminal comprises a grounding frame part, and a grounding arm extends from the upper end of the grounding frame part, so that at least three transmission paths are formed between the grounding frame part and the butting element; the signal terminal comprises a signal frame part, and a signal arm extends from the upper end of the signal frame part, so that at least two transmission paths are formed between the signal frame part and the butting element; the number of transmission paths formed between the grounding frame portion of the grounding terminal and the butt joint element is larger than the number of transmission paths formed between the signal frame portion of the signal terminal and the butt joint element. The number of the at least three transmission paths formed between the grounding frame part of the grounding terminal and the butt joint element is larger than that of the transmission paths formed between the signal frame part of the signal terminal and the butt joint element, so that the number of grounding backflow paths of the grounding terminal is increased, crosstalk between the signal terminals is improved, and the high-frequency performance of the electric connector is improved.

The utility model provides a high-speed connector, which comprises an insulating main body and a conductive terminal assembly, the insulating main body extends along a first direction, a plurality of mounting grooves are arranged at intervals along the first direction, the mounting grooves are arranged along a second direction, the insulating main body is provided with plugging grooves extending along the first direction, the plugging grooves are communicated with the mounting grooves, and the conductive terminal assembly is arranged on the insulating main body. The plug-in groove is used for plugging external expansion equipment, the conductive terminal assembly comprises a plurality of signal terminals and ground terminals, the signal terminals and the ground terminals enter the plug-in groove through the mounting groove to contact the external expansion equipment, the signal terminals transmit differential signals, and the ground terminals are located on the two sides of the signal terminals to reduce interference. The middle part of the ground terminal is widened along the second direction and covers the signal terminal along the first direction, so that the anti-interference effect is enhanced. By widening the ground terminal and covering the adjacent signal terminals, the effective sectional area of the ground terminal is enlarged, shielding is enhanced, signal interference is suppressed, and the crosstalk problem is solved.

The invention belongs to the field of photoelectric conversion, and discloses a pixel unit and a signal reading method thereof, and the pixel unit comprises a detection array, a signal conversion module and a driving module which are connected in sequence; the detection array comprises a plurality of macro pixel arrays and a plurality of switches, the macro pixel arrays are sequentially arranged according to a set interval, each macro pixel array comprises a plurality of pixel modules, the pixel modules are sequentially arranged, and the pixel modules are correspondingly connected with the switches according to a set sequence. According to the technical scheme, the crosstalk problem between the adjacent pixel units in the detector array can be solved.

The utility model discloses a display panel and a display device. The display panel comprises a plurality of first sub-pixels, a plurality of second sub-pixels and a plurality of third sub-pixels, the plurality of first sub-pixels and the plurality of second sub-pixels form a first virtual quadrangle; the plurality of third sub-pixels form a second virtual quadrangle; wherein the external parallelogram of the first sub-pixel is in a first virtual shape; the center of the first sub-pixel does not coincide with the center of the first virtual shape; the external parallelogram of the second sub-pixel is in a second virtual shape; the center of the second sub-pixel does not coincide with the center of the second virtual shape; the edges, which do not coincide with the first virtual shape, in the first sub-pixel comprise a first edge; the edges, which do not coincide with the second virtual shape, in the second sub-pixel comprise a second edge; in at least part of adjacent first sub-pixels and second sub-pixels, the included angle between the first side and the second side is alpha 1, and alpha 1 is larger than or equal to 0 degree and smaller than or equal to 45 degrees. According to the technical scheme, the display effect of the display panel can be improved.

The invention provides an image sensor and a manufacturing method thereof, and the manufacturing method comprises the steps: firstly forming latticed deep grooves in a first epitaxial layer, then forming an N-type ion implantation region in the first epitaxial layer of each grid between the deep grooves, and finally forming a cross-shaped P-type isolation region in the N-type ion implantation region of each grid, the N-type ion implantation region in each grid is divided into four pixel blocks. According to the invention, deep trench etching and filling isolation are carried out on the peripheries of the four pixel blocks, and the grid-shaped second epitaxial layer and the cross-shaped P-type isolation region are utilized to jointly form the isolation structure, so that the difficulty of grid-shaped deep trench etching on a smaller area is reduced; the problems that lattice damage of a PD photosensitive area is easily caused by deep groove etching of a small-size photodiode and the dark current of the photodiode is increased are avoided, the dark current during single PD imaging can be improved, and crosstalk between pixels can be effectively improved in the pixel four-in-one imaging process.

The utility model relates to a PCB structure based on reduction of BGA fan-out wiring via hole crosstalk, a surface layer board is provided with a signal bonding pad and a ground bonding pad, the bottom of the signal bonding pad is connected with a signal via hole, the bottom of the ground bonding pad is connected with a ground via hole, the central axis of the signal via hole is arranged to deviate from the central point of the signal bonding pad; and the direction in which the central axis of the signal via hole deviates from the signal bonding pad is opposite to the fan-out direction of the fan-out wire on the signal via hole. According to the design of the signal via hole offset disc, the direction in which the central axis of the signal via hole deviates from the signal bonding pad is opposite to the fan-out direction of the fan-out wire, so that the space between the signal via hole and the ground via hole on the side is increased, the wiring space of the fan-out wire is increased, and the fan-out wire can still keep the original wire width even if the fan-out wire keeps the original wire width. According to the fan-out routing structure, the ground via holes can be avoided in the dense array bonding pad area, the line widths of the fan-out routing lines are equal everywhere, line width abrupt change of narrow line segments and width limit segments does not exist, and therefore crosstalk of high-frequency signals on the fan-out routing lines can be effectively improved.

This invention discloses an optical path system for an optical switch, comprising: a first single-axis crystal, a second single-axis crystal, a polarization combining prism, a total internal reflection prism, a first fiber collimator, a second fiber collimator, a third fiber collimator, a motor, and a motor controller; both the first and second single-axis crystals are cylindrical and placed with their optical axes aligned; the polarization combining prism and the total internal reflection prism are applied to radially symmetrical positions on the exit circular surface of the second single-axis crystal, and the two prisms are placed perpendicularly, with the polarization combining prism on top and the total internal reflection prism on the bottom; the first fiber collimator is located at the input end on the incident circular surface of the first single-axis crystal, the second fiber collimator is located at the output end on the exit circular surface of the second single-axis crystal, and the third fiber collimator is located at the output end of the polarization combining prism; the motor controller is used to control the rotation of the motor, thereby controlling the rotation of the second single-axis crystal.

The utility model relates to a high-speed cable connector structure for improving crosstalk, which comprises a PCBA (printed circuit board assembly) arranged in a shell, a plurality of bonding pad groups arranged on the PCBA and signal lines arranged corresponding to the bonding pad groups, each bonding pad group comprises a signal bonding pad and a shielding ground bonding pad, a signal conductor and an aluminum foil are exposed at the front end of each signal line, the signal conductor is welded and fixed with the signal bonding pad, and the shielding ground bonding pad is welded and fixed with the signal bonding pad. The printed circuit board is characterized in that UV insulating blocks wrapping the corresponding signal bonding pads and the signal conductors are formed at the front ends of the signal lines on the PCBA through glue dispensing or forming, the UV insulating blocks are covered with conductive layers through glue dispensing or forming, and the conductive layers are used for conducting the corresponding shielding ground bonding pads and the aluminum foil to form a complete shielding layer. According to the utility model, the signal crosstalk between the signal lines can be further reduced, the manufacture is convenient, and the compatibility with PCBAs of various specifications is better.