Plasma etching device, wafer fixture, and method for setting wafer

Abstract

The invention discloses a plasma etching device, a wafer fixture, and a method for setting a wafer. The plasma etching device comprises a reaction cavity, a lower electrode, a wafer fixture, and an upper electrode arranged inside the reaction cavity and opposite to the lower electrode. The lower electrode is arranged inside the reaction cavity and has rectangular body. The wafer fixture covers the body of the lower electrode and has a square base plate, wherein the base plate is provided with a plurality of wafer containing grooves, with each wafer containing groove capable of containing a wafer. The plasma etching device can contain a lot of wafers, reach the optimal space-utilizing rate, raise the production efficiency, be easily positioned, and make automatic of the flow of loading a wafer to be inside the reaction cavity.

Description

Technical field [0001] The invention relates to a plasma etching equipment and a wafer jig, in particular to a plasma etching equipment which can automatically load wafers, a wafer jig and a method for setting wafers. Background technique [0002] The existing plasma etching equipment for wafers uses circular electrodes, and the wafer-bearing jigs also match the electrodes with circular shapes. See figure 1 Since the outer contour of the wafer jig 9 is circular, and the general wafer accommodating grooves 91 are arranged in an array, and are generally arranged in a square shape, it is limited by the circular boundary of the wafer jig 9 so that the wafer The overall area of ​​the fixture 9 is not fully utilized. E.g figure 1 As shown, the width of the partial area 92 (the area outside the square arrangement of the wafer accommodating groove 91) of the adjacent boundary cannot accommodate a wafer accommodating groove 91, but the total area of ​​these areas 92 can also accommodate ...

AI Technical Summary

Problems solved by technology

E.g figure 1 As shown, its width cannot accommodate one wafer accommodating groove 91 in the partial area 92 of the adjacent boundary (the outer area of ​​the wafer accommodating groove 91 arranged in a square), but the total area of ​​these regions 92 can also accommodate several more. wafer holding slot 91, so these areas 92 are wasted space

[0003] Furthermore, since the outer contour of the wafer fixture is circular and has no directionality, it is desired to place the wafer fixture carrying the wafer into plasma etching When the electrode is on the equipment, it is not easy to position the wafer fixture, so it is impossible to use the robot arm to automatically place it, which needs to increase the working time and labor cost

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