Method for determining service life of hot carrier injection device

A hot carrier, device life technology, applied in the direction of single semiconductor device testing, etc.
CN102495345AActive Publication Date: 2012-06-13SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
4 Cites 18 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
Publication Date
2012-06-13

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a method for determining the service life of a hot carrier injection (HCI) device. The method comprises the following steps of: measuring Isub-Vg curves and Id-Vg curves of a device under three different Vds; finding out an Isubmax value, a Vg value under the Isubmax value and an Id value under the Vg value respectively for each group of the Isub-Vg curve and the Id-Vg curve; drawing an Isubmax-Vd relational graph and an Id-Vd relational graph by using the values obtained in the former step; fitting the Isubmax-Vd relational graph and the Id-Vd relational graph respectively by using a power function to obtain a fitting formula; and deducting a group of Isubmax values and Id values under a Vd working voltage condition according to the fitting formula, deducting three groups of Isubmax values and Id values under an HCI stress test condition according to the fitting formula, deducting the device degeneration performance obtained by the HCI stress test, and deducting the final service life of the device through a service life model. According to the method, the HCI service life of a metal oxide semiconductor (MOS) device is estimated by using a small number of samples, and the service life of the device under any working voltage can be obtained, so that the estimation cost is reduced, and the estimation flexibility is improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of semiconductor device testing, in particular to a device hot carrier injection test life method, so as to reduce evaluation cost and increase evaluation flexibility. Background technique

[0002] For the VLSI manufacturing industry, with the continuous reduction in the size of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices, the semiconductor manufacturing process has entered the era of deep submicron, and is developing towards ultra-deep submicron. At this time, The reliability of semiconductor devices directly affects the performance and service life of IC chips produced. However, when the size of the MOS device is reduced proportionally, the operating voltage of the device does not decrease correspondingly, so the electric field strength inside the corresponding device increases with the reduction of the device size. Therefore, in small-sized devices, the lateral size of the circuit is getting...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More