Method for determining service life of hot carrier injection device

Abstract

The invention provides a method for determining the service life of a hot carrier injection (HCI) device. The method comprises the following steps of: measuring Isub-Vg curves and Id-Vg curves of a device under three different Vds; finding out an Isubmax value, a Vg value under the Isubmax value and an Id value under the Vg value respectively for each group of the Isub-Vg curve and the Id-Vg curve; drawing an Isubmax-Vd relational graph and an Id-Vd relational graph by using the values obtained in the former step; fitting the Isubmax-Vd relational graph and the Id-Vd relational graph respectively by using a power function to obtain a fitting formula; and deducting a group of Isubmax values and Id values under a Vd working voltage condition according to the fitting formula, deducting three groups of Isubmax values and Id values under an HCI stress test condition according to the fitting formula, deducting the device degeneration performance obtained by the HCI stress test, and deducting the final service life of the device through a service life model. According to the method, the HCI service life of a metal oxide semiconductor (MOS) device is estimated by using a small number of samples, and the service life of the device under any working voltage can be obtained, so that the estimation cost is reduced, and the estimation flexibility is improved.

Description

technical field [0001] The invention relates to the field of semiconductor device testing, in particular to a device hot carrier injection test life method, so as to reduce evaluation cost and increase evaluation flexibility. Background technique [0002] For the VLSI manufacturing industry, with the continuous reduction in the size of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices, the semiconductor manufacturing process has entered the era of deep submicron, and is developing towards ultra-deep submicron. At this time, The reliability of semiconductor devices directly affects the performance and service life of IC chips produced. However, when the size of the MOS device is reduced proportionally, the operating voltage of the device does not decrease correspondingly, so the electric field strength inside the corresponding device increases with the reduction of the device size. Therefore, in small-sized devices, the lateral size of the circuit is getting...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a method for determining the life of hot carrier injection devices, which can solve the need to prepare and provide additional samples for device life evaluation in the general HCI test method, and can obtain any working voltage Lower device lifetime, which not only reduces the evaluation cost, but also increases the evaluation flexibility

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