Preparation method of large thickness period polarization ferroelectric crystal material

A ferroelectric crystal, periodic polarization technology, applied in metal material coating process, ion implantation plating, coating and other directions, to achieve the effect of mature and easy-to-implement bonding process

Active Publication Date: 2013-12-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0008] In view of this, the main purpose of the present invention is to provide a method for preparing a large-thickness periodically polarized ferroelectric crystal material, to solve the problem of preparing a large-thickness periodic and quasi-periodic periodic inversion ferroelectric crystal material, to achieve large-scale Purpose of Thickness Periodic and Quasi-Periodic Periodic Inversion Ferroelectric Crystal Materials

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  • Preparation method of large thickness period polarization ferroelectric crystal material
  • Preparation method of large thickness period polarization ferroelectric crystal material
  • Preparation method of large thickness period polarization ferroelectric crystal material

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[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0026] Such as figure 1 as shown, figure 1 It shows a flowchart of a method for preparing a large-thickness periodically poled ferroelectric crystal material according to an embodiment of the present invention. The method includes: vapor-depositing a transparent electrode on the +z surface of the ferroelectric crystal material; The +z surface of the ferroelectric crystal material is bonded with the +z surface of another ferroelectric crystal material to obtain a composite ferroelectric crystal; metal electrodes are evaporated on the upper and lower surfaces of the composite ferroelectric crystal, and then the evaporated metal electrodes are The composite ferroelectric crystal is polarized to obtain a large-thickness peri...

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Abstract

The invention discloses a preparation method of a large thickness period polarization ferroelectric crystal material, which includes evaporating a transparent electrode on the +z face of the large thickness period polarization ferroelectric crystal material, bonding the +z face of the ferroelectric crystal material evaporated with the transparent electrode with the +z face of another ferroelectric crystal material to obtain a composite ferroelectric crystal, evaporating metal electrodes on the upper face and the lower face of the composite ferroelectric crystal and polarizing the ferroelectric crystal of the metal electrodes evaporated with the metal electrodes to obtain the large thickness period polarization ferroelectric crystal material. By means of the preparation method, the large thickness period polarization ferroelectric crystal material can be prepared.

Description

technical field [0001] The invention relates to the technical field of crystal material processing, and discloses a preparation method of a large-thickness periodically polarized ferroelectric crystal material. Background technique [0002] Quasi-phase-matching (Quasi-phase-matching) is an important technology of nonlinear optical frequency conversion. Its idea was first proposed by J.Armstrong et al. in 1962, and V.Berger extended it to two-dimensional structures in 1998, and Propose the concept of nonlinear photonic crystal nonlinear photonic crystal. Momentum conservation is required in nonlinear frequency conversion, which is difficult to achieve in ordinary nonlinear crystals due to the existence of dispersion, especially when multiple nonlinear interactions occur at the same time, but the reciprocal lattice vector provided by nonlinear periodic structures can be easily achieve phase matching. By constructing a periodic structure (nonlinear photonic crystal) in a nonl...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/355C23C14/08
Inventor 郑婉华马传龙范学东马绍栋齐爱谊
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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