Miniature high-selectivity frequency independently controllable tri-band bandpass filter
A high-selectivity filter technology, applied to waveguide devices, electrical components, circuits, etc., can solve the problems of large size, poor use of frequency bands, and difficult frequency control, etc., to achieve small size and reduced size , highly selective effect
Active Publication Date: 2012-06-27
SOUTH CHINA UNIV OF TECH
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Such as B.-J. Chen, T.-M. Shen, and R.-B. Wu, “Design of tri-band filters with improved band allocation,” IEEE Trans. Microw. Theory Tech., vol. 57, no . 7, pp. 1790-1797, Jul. 2009. Although the frequency can also be independently controlled, but the volume is too large
The second method is to use a three-section step impedance line, such as: C.-I G. Hsu, C.-H. Lee, and Y.-H. Hsieh, “Tri-band bandpass filter with sharp passband skirts designed using tri-section SIRs,” IEEE Microwave and Wireless Components Letters. vol.18, no.1, pp.19-21, Jan.2008. Although its structure is simple and its size is small, its several frequencies are Influenced by each other, the frequency is not easy to control
not making good use of the frequency band
Method used
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[0031] The structure of the miniaturized, highly selective, frequency-independently controllable three-pass band-pass filter is as follows figure 1 As shown, the relevant dimensions are as follows figure 2 shown. The thickness of the dielectric substrate is 0.635 mm, the relative permittivity is 6.15, and the loss tangent is 0.0015. Folding the resonator into an n-shaped structure can effectively reduce the size of the filter. The size parameters of each microstrip line of the filter are as follows: L 1 =12.3±0.2mm, L 2 =4.6±0.2 mm, L 3 =5.8±0.2 mm, L 4 =2±0.2 mm, L 5 =19.8±0.2 mm, L 6 =12±0.2 mm, L 7 =2±0.2 mm, L 8 =1.6±0.2 mm, L 9 =4.4±0.2mm, L 10 =8.2±0.2 mm, W 1 =1.6±0.2 mm, W 2 =1.2±0.2 mm, W 3 =0.4±0.1 mm, W 4 =0.92mm, W 5 =1.5±0.1 mm, W 6 =0.9±0.1mm, g 1 =0.2mm, g 2 =0.6 mm. The respective length and width of these microstrip lines are selected to obtain the desired input / output impedance characteristics, in-band transmission charac...
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Abstract
The invention discloses a miniature high-selectivity frequency independently controllable tri-band bandpass filter, which comprises an upper-layer microstrip structure, an interlayer dielectric substrate and a lower-layer grounding metal plate. The filter consists of two resonators. Each resonator comprises a main transmission microstrip line and a stepped-impedance open-circuit branch line which is loaded to the center of the main transmission line. The resonators are symmetric about the center of the microstrip structure. Feeder lines are directly bridged on one side of each resonator, and also form a symmetrical structure. In addition, a pseudo-interdigital structure is used for generating a transmission zero, so that the filter has high selectivity. The filter has the characteristics of high selectivity and controllability and independent tuning of center frequencies of three bands.
Description
technical field [0001] The invention relates to a miniaturized three-pass band-pass filter, in particular to a multi-frequency communication system band-pass filter which can be independently controlled at three center frequencies and can be applied to radio frequency front-end circuits. Background technique [0002] In today's society, with the rapid development of multi-system wireless communication, filters, as the key components of the front-end of radio frequency systems, have become a hot issue, and there is an extremely urgent need for miniaturized and multi-passband filters. [0003] At present, many researchers have done a lot of research in this area and achieved a lot of results. Their main design methods can be divided into the following categories. The first approach is to achieve the triple-passband effect by using two or three sets of resonators, one set of resonators producing one passband and the other set producing the other two passbands. Such as B.-J. Ch...
Claims
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Inventor 章秀银高立
Owner SOUTH CHINA UNIV OF TECH