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Semiconductor memory, interface circuit and access method thereof

An access method and interface circuit technology, which is applied in the field of storage system and memory, can solve the problems that are not conducive to reducing the circuit area of ​​the storage system, increasing the cost of the flash memory controller, and being inconvenient to expand the capacity of the storage system, etc.

Inactive Publication Date: 2012-07-04
MEMBLAZE TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This not only increases the cost of the flash memory controller, but also is not conducive to reducing the circuit area of ​​the storage system, and it is not convenient to expand the capacity of the storage system

Method used

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  • Semiconductor memory, interface circuit and access method thereof
  • Semiconductor memory, interface circuit and access method thereof
  • Semiconductor memory, interface circuit and access method thereof

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0042] Figure 4A is a schematic diagram of a NAND flash memory according to a first embodiment of the present invention. The flash die 401 includes a die portion 406 , an interface circuit 410 consistent with prior art NAND flash dies. The interface circuit 410 includes a logic circuit 402 , a logic circuit 403 , a latch or flip-flop 404 , and a gate circuit 407 . Interface circuit 410 may be integrated on the same die as die portion 406, or provided in a separate die or chip.

[0043] The logic circuit 402 receives the address latch (ALE) signal, the command latch (CLE) signal and is connected to the address latch input (ALE_IN), command latch input (CLE_IN) ports of the die portion 406 . The logic circuit 402 also outputs an enable signal (CE_EN) to the gate circuit 407 . The gate circuit 407 receives the CE_EN signal and the write enable WE# / CLK signal from the logic circuit 402 . The output of gate circuit 407 is connected to the enable signal (G) input of latch or fl...

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PUM

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Abstract

The invention discloses a semiconductor memory, an interface circuit and an access method thereof. The access method of the semiconductor memory chip comprises the following steps: (1) sending a signal to a first flash memory chip by a controller to indicate beginning of an access; (2) sending a tube core and / or chip address signal and an effective first write enable (WEN) signal to the first flash memory chip by the controller; and (3) if the tube core and / or chip address signal indicates a first tube core of the first flash memory chip, producing an enable signal used for a semiconductor memory on the first tube core.

Description

technical field [0001] The invention relates to the field of memory and storage system. In particular, the present invention relates to methods, devices and systems for reducing the number of semiconductor memory pins and transmitting signals between a controller and the semiconductor memory. Background technique [0002] figure 1 It is a schematic diagram of pins of a NAND flash memory chip in the prior art. When "CE#" is valid, the NAND flash memory chip is in a standby (stand-by) mode, and when "CE#" is invalid, the NAND flash memory chip does not work. The detailed operation mode of the NAND flash memory chip in the prior art can be obtained from the data sheet of the NAND flash memory chip, for example at http: / / www.samsung.com / global / system / business / semiconductor / product / 2007 / Data sheet available on 6 / 11 / NANDFlash / SLC_LargeBlock / 8Gbit / K9F8G08U0M / ds_k9f8g08x0m_rev 10.pdf. [0003] For occasions requiring large-capacity memory, it is necessary to set up multiple NAN...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06G11C16/26
Inventor 殷雪冰
Owner MEMBLAZE TECH BEIJING